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Progress In Electromagnetics Research
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MODELING OF BIPOLAR JUNCTION TRANSISTOR IN FDTD SIMULATION OF PRINTED CIRCUIT BOARD

By F. Kung and H. T. Chuah

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Abstract:
A simple and efficient approximate method to incorporate nonlinear bipolar junction transistor (BJT) into Finite-Difference Time-Domain (FDTD) framework is presented. This method applies Taylor expansion on the nonlinear transport equations of the BJT based on Gummel-Poon model [5]. The results are two coupled one-step explicit finite difference schemes for the electromagnetic fields in the vicinity of the BJT, which can be solved easily. A simulation example is carried out for a power amplifier and the result compares well with the measurement. A two-step simulation scheme is introduced to hasten the process of reaching transient steady state. Finally, brief comments on treating the FDTD framework as a dynamical system is included. This perspective is useful for analyzing the stability of FDTD framework with nonlinear lumped elements.

Citation: (See works that cites this article)
F. Kung and H. T. Chuah, "Modeling of Bipolar Junction Transistor in FDTD Simulation of Printed Circuit Board," Progress In Electromagnetics Research, Vol. 36, 179-192, 2002.
doi:10.2528/PIER02013001
http://www.jpier.org/PIER/pier.php?paper=0201301

References:
1. Taflove, A., Computational Electrodynamics — The Finite- Difference Time-Domain Method, Artech House, 1995.

2. Piket-May, M. J., A. Taflove, and J. Baron, "FD-TD modeling of digital signal propagation in 3-D circuits with passive and active loads," IEEE Trans. Microwave Theory and Techniques, Vol. 42, No. 8, 1514-1523, August 1994.
doi:10.1109/22.297814

3. Ciampolini, P., P. Mezzanotte, L. Roselli, and R. Sorrentino, "Accurate and efficient circuit simulation with lumped-element FDTD technique," IEEE Trans. Microwave Theory and Techniques, Vol. 44, No. 12, 2207-2214, December 1996.
doi:10.1109/22.556448

4. Emili, G., F. Alimenti, P. Mezzanotte, L. Roselli, and R. Sorrentino, "Rigorous modeling of packaged schottky diodes by the nonlinear lumped network (NL2N)-FDTD approach," IEEE Trans. Microwave Theory and Techniques, Vol. 48, No. 12, 2277-2281, December 2000.
doi:10.1109/22.898975

5. Massobrio, G. and P. Antognetti, Seminconductor Device Modeling with SPICE, 2nd edition, McGraw-Hill, 1993.

6. Streetman, B. G. and S. Banerjee, Solid State Electronic Devices, Prentice Hall, 2000.

7. Kung, F. and H. T. Chuah, "Modeling of diode in FDTD simulation of printed circuit board," JEWA, Vol. 16, No. 1, 99-110, 2002.

8., "Data Sheet: BFR92A, NPN 5GHz wideband transistor,", Product specification, Philips Semiconductor, www.semiconductors.com, Oct. 1997.

9. Scheinerman, E. R., Invitation to Dynamical Systems, Prentice Hall, 1996.

10. Sarto, M. S., "Suppression of late-time instabilities in 3-D — FDTD analyses by combining digital filtering techniques and efficient boundary conditions," IEEE Trans. Magnetics, Vol. 37, No. 5, 3273-3276, September 2001.
doi:10.1109/20.952593


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