Progress In Electromagnetics Research
ISSN: 1070-4698, E-ISSN: 1559-8985
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By F. Kung and H. T. Chuah

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A simple and efficient approximate method to incorporate nonlinear bipolar junction transistor (BJT) into Finite-Difference Time-Domain (FDTD) framework is presented. This method applies Taylor expansion on the nonlinear transport equations of the BJT based on Gummel-Poon model [5]. The results are two coupled one-step explicit finite difference schemes for the electromagnetic fields in the vicinity of the BJT, which can be solved easily. A simulation example is carried out for a power amplifier and the result compares well with the measurement. A two-step simulation scheme is introduced to hasten the process of reaching transient steady state. Finally, brief comments on treating the FDTD framework as a dynamical system is included. This perspective is useful for analyzing the stability of FDTD framework with nonlinear lumped elements.

Citation: (See works that cites this article)
F. Kung and H. T. Chuah, "Modeling of Bipolar Junction Transistor in FDTD Simulation of Printed Circuit Board," Progress In Electromagnetics Research, Vol. 36, 179-192, 2002.

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