Progress In Electromagnetics Research
ISSN: 1070-4698, E-ISSN: 1559-8985
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By X. Li and J. Gao

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An approach for the PAD modeling technique for microwave on wafer measurement based on a combination of the conventional equivalent circuit model and artificial neural network (ANN) is presented in this paper. The PAD capacitances are determined from S parameters of different size of PAD test structure based on EM (electromagnetic) simulation and described as functions of the dimensions of the PAD structure by using sub-ANN. Good agreement is obtained between ANN-based modeling and EM simulated results up to 40 GHz. The de-embedding procedure for PHEMT device utilizing the ANN based PAD model is demonstrated.

X. Li and J. Gao, "Pad modeling by using artificial neural network," Progress In Electromagnetics Research, Vol. 74, 167-180, 2007.

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