PIER
 
Progress In Electromagnetics Research
ISSN: 1070-4698, E-ISSN: 1559-8985
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CHARACTERIZATION OF THE SUSCEPTIBILITY OF INTEGRATED CIRCUITS WITH INDUCTION CAUSED BY HIGH POWER MICROWAVES

By S.-M. Hwang, J.-I. Hong, and C.-S. Huh

Full Article PDF (1,019 KB)

Abstract:
This paper examines malfunction and destruction of semiconductors by high power microwaves. The experiments employ a waveguide and a magnetron to study the influence of high power microwaves on TTL/CMOS IC inverters. The TTL/CMOS IC inverters are composed of a LED circuit for visual discernment. A CMOS IC inverter damaged by a high power microwave is observed with power supply current and delay time. When the power supply current was increased 2.14times for normal current at 10 kV/m, the CMOS inverter was broken by latch-up. The CMOS inverter damaged by latch-up returned its original level of functioning, because parasitic impedance inside the chip increased with the elapse of time. Three different types of damage were observed by microscopic analysis: component, onchipwire, and bondwire destruction. Based on the results, TTL/CMOS IC inverters can be applied to database to elucidate the effects of microwaves on electronic equipment.

Citation:
S.-M. Hwang, J.-I. Hong, and C.-S. Huh, "Characterization of the susceptibility of integrated circuits with induction caused by high power microwaves," Progress In Electromagnetics Research, Vol. 81, 61-72, 2008.
doi:10.2528/PIER07121704
http://www.jpier.org/PIER/pier.php?paper=07121704

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