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Progress In Electromagnetics Research
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TUNABLE PERIODIC MICROSTRIP STRUCTURE ON GAAS WAFER

By L. Matekovits, M. Heimlich, and K. P. Esselle

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Abstract:
A one dimensional tunable periodic structure in microstip technology on gallium arsenide (GaAs) substrate is numerically investigated. The unit cell contains a number of patches positioned between the ground plane and the microstrip line. The patches, representing reactive loads, can be selectively short-circuited by externally-ontrolled FET switches integrated in the hosting substrate. The possibility of controlling the position of the band-gap, and implicitly the value of the effective dielectric constant along the line, for different combinations of the switches is demonstrated.

Citation:
L. Matekovits, M. Heimlich, and K. P. Esselle, "Tunable periodic microstrip structure on GaAs wafer," Progress In Electromagnetics Research, Vol. 97, 1-10, 2009.
doi:10.2528/PIER09091001
http://www.jpier.org/PIER/pier.php?paper=09091001

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