Progress In Electromagnetics Research
ISSN: 1070-4698, E-ISSN: 1559-8985
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By O. Oubram, L. M. Gaggero-Sager, O. Navarro, and M. Ouadou

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According to the scaling-down theory, the ALD-FET (Atomic Layer Doping-Field Effect Transistor) structure has attracted a lot of attention in view of its uses for developing devices with very short channels and for achieving very-high-speed operation. Therefore, there is a strong need to obtain an accurate understanding of carrier transport (mobility and conductivity) in such devices. In this work, we report the carrier transport based on the electronic structure of devices. Our results include analytical expressions of both mobility and conductivity. Our analytical expressions for the mobility and conductivity allow us to analyze transport in ALD-FET. We report regions where this device operates in digital and analogue mode. These regions are delimited in terms of intrinsic and extrinsic parameters of the system. The width of the Ohmic region as well as the NDR (Negative Differential Resistance) properties of the system are also characterized.

O. Oubram, L. M. Gaggero-Sager, O. Navarro, and M. Ouadou, "Transport and Electronic Properties of the GaAs Ald-Fet," Progress In Electromagnetics Research, Vol. 118, 37-56, 2011.

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