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Progress In Electromagnetics Research
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AN ANN-BASED SMALL-SIGNAL EQUIVALENT CIRCUIT MODEL FOR MOSFET DEVICE

By N. Li, X. Li, and S. Quan

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Abstract:
An ANN-based small-signal equivalent circuit model for 130 nm MOSFET device is proposed in this paper. The proposed model combines the conventional small-signal equivalent circuit model and artificial neural networks (ANNs) to achieve higher accuracy. Good agreement is obtained between proposed model and measured results confirming the validity and effectiveness of proposed model.

Citation:
N. Li, X. Li, and S. Quan, "An ANN-Based Small-Signal Equivalent Circuit Model for Mosfet Device," Progress In Electromagnetics Research, Vol. 122, 47-60, 2012.
doi:10.2528/PIER11092103
http://www.jpier.org/PIER/pier.php?paper=11092103

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