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NUMERICAL ANALYSIS OF HOMOJUNCTION AVALANCHE PHOTODIODES (APDS)

By M. H. H. Seyedi

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Abstract:
In this paper we introduce a rigorous numerical analysis to investigate the characteristics of double carrier multiplication homojunction avalanche photodiodes (APDs) considering the nonlocal nature of the ionization process in the wide range of multiplication region width. Also in our calculations the effects of dead space has been considered. Our analyses based on the history dependent multiplication theory (HDMT) and width independent ionization coefficient.

Citation:
M. H. H. Seyedi, "Numerical Analysis of Homojunction Avalanche Photodiodes (Apds)," Progress In Electromagnetics Research C, Vol. 3, 45-56, 2008.
doi:10.2528/PIERC08013004

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