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Progress In Electromagnetics Research C
ISSN: 1937-8718
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L-BAND AMPLIFICATION AND MULTI-WAVELENGTH LASING WITH BISMUTH-BASED ERBIUM DOPED FIBER

By S. W. Harun, N. Tamchek, S. Shahi, and H. Ahmad

Full Article PDF (405 KB)

Abstract:
Bismuth-based EDF (Bi-EDF) is comprehensively studied as an alternative medium for optical amplification. The bismuth glass host provides the opportunity to be doped heavily with erbium ions to allow a compact optical amplifier design. The gain spectrum of the Bi-EDF amplifier has a measured amplification bandwidth of 80 nm with a quantum conversion efficiency of 20% obtained using 1480 nm pumping and 215 cm long of doped fiber. A multi-wavelength laser comb is also demonstrated using a four-wave mixing effect in a backward pumped Bi-EDF. The laser generates more than 10 lines of optical comb with a line spacing of approximately 0.41 nm at 1615.5 nm region using 146 mW of 1480 nm pump power.

Citation:
S. W. Harun, N. Tamchek, S. Shahi, and H. Ahmad, "L-Band Amplification and Multi-Wavelength Lasing with Bismuth-Based Erbium Doped Fiber," Progress In Electromagnetics Research C, Vol. 6, 1-12, 2009.
doi:10.2528/PIERC08122702
http://www.jpier.org/pierc/pier.php?paper=08122702

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