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THE ELECTROSTATIC POTENTIAL ASSOCIATED TO INTERFACE PHONON MODES IN NITRIDE SINGLE HETEROSTRUCTURES

By M. E. Mora-Ramos, R. Perez-Alvarez, and V. R. Velasco

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Abstract:
The electrostatic potential associated to the interface oscillation modes in nitride-based heterostructure is calculated with the use of a complete phenomenological electroelastic continuum approach for the long wave optical oscillations, and the Surface Green Function Matching technique. The crystalline symmetries of zincblende and - isotropically averaged - wurtzite are both considered in the sets of input bulk frequencies and dielectric constants.

Citation: (See works that cites this article)
M. E. Mora-Ramos, R. Perez-Alvarez, and V. R. Velasco, "The Electrostatic Potential Associated to Interface Phonon Modes in Nitride Single Heterostructures," Progress In Electromagnetics Research Letters, Vol. 1, 27-33, 2008.
doi:10.2528/PIERL07111806

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