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2007-12-12

Analysis of Capacitance Across Interconnects of Low-k Dielectric Used in a Deep Sub-Micron CMOS Technology

By Sonanvane Avinash, Bhavana N. Joshi, and Ashok Mahajan
Progress In Electromagnetics Research Letters, Vol. 1, 189-196, 2008
doi:10.2528/PIERL07112802

Abstract

The paper presents the detailed analysis of the interconnect capacitance, crosstalk time and peak crosstalk voltage. The dependency of the couple capacitance and fringe capacitance on the interconnect layer dimensions affects significantly to the interconnect capacitance. The peak crosstalk time obtained to be 13 femtoseconds for 9.6 femtoseconds of propagation delay, while the maximum crosstalk voltage obtained to be 178 mV.

Citation

 (See works that cites this article)
Sonanvane Avinash, Bhavana N. Joshi, and Ashok Mahajan, "Analysis of Capacitance Across Interconnects of Low-k Dielectric Used in a Deep Sub-Micron CMOS Technology," Progress In Electromagnetics Research Letters, Vol. 1, 189-196, 2008.
doi:10.2528/PIERL07112802
http://www.jpier.org/PIERL/pier.php?paper=07112802

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