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Progress In Electromagnetics Research Letters
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ANALYSIS OF CAPACITANCE ACROSS INTERCONNECTS OF LOW-K DIELECTRIC USED IN A DEEP SUB-MICRON CMOS TECHNOLOGY

By S. Avinash, B. N. Joshi, and A. M. Mahajan

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Abstract:
The paper presents the detailed analysis of the interconnect capacitance, crosstalk time and peak crosstalk voltage. The dependency of the couple capacitance and fringe capacitance on the interconnect layer dimensions affects significantly to the interconnect capacitance. The peak crosstalk time obtained to be 13 femtoseconds for 9.6 femtoseconds of propagation delay, while the maximum crosstalk voltage obtained to be 178 mV.

Citation: (See works that cites this article)
S. Avinash, B. N. Joshi, and A. M. Mahajan, "Analysis of Capacitance Across Interconnects of Low-K Dielectric Used in a Deep Sub-Micron CMOS Technology," Progress In Electromagnetics Research Letters, Vol. 1, 189-196, 2008.
doi:10.2528/PIERL07112802

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