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Progress In Electromagnetics Research Letters
ISSN: 1937-6480
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HIGH FREQUENCY ELECTRICAL CHARACTERIZATION OF 3D SIGNAL/GROUND THROUGH SILICON VIAS

By S. Adamshick, R. Carroll, M. Rao, D. La Tuplie, S. Kruger, J. Burke, and M. Liehr

Full Article PDF (520 KB)

Abstract:
3D integration using through-silicon-vias (TSVs) is gaining considerable attention due to its superior packaging efficiency resulting in higher functionality, improved performance and a reduction in power consumption. In order to implement 3D chip designs with TSV technology, robust TSV electrical models are required. Specifically, due to the increase of signal speeds into the gigahertz (GHz) spectrum, a high frequency electrical characterization best describes TSV behavior. In this letter, 5x50 μm TSVs are manufactured using a via-mid integration scheme and characterized using S-Parameters up to 65 GHz. At 50 GHz, the measured attenuation constant is 0.35 dB/via with a time delay of 0.7 ps/via.

Citation:
S. Adamshick, R. Carroll, M. Rao, D. La Tuplie, S. Kruger, J. Burke, and M. Liehr, "High Frequency Electrical Characterization of 3D Signal/Ground through Silicon Vias," Progress In Electromagnetics Research Letters, Vol. 47, 71-75, 2014.
doi:10.2528/PIERL14052704

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