PIER Letters
 
Progress In Electromagnetics Research Letters
ISSN: 1937-6480
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NONLINEAR CHARACTERISTICS OF P-I-N DIODE CIRCUITS ANALYZED BY A PHYSICALLY BASED SIMULATION METHOD

By H. Wang, G.-D. Wang, X.-L. Liu, K. Xu, and X. Chen

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Abstract:
Nonlinear characteristics of semiconductor devices play a key role in the performances of circuits, but their modelling is still a big challenge in circuit simulations nowadays. This paper explores modelling nonlinear characteristics of circuits containing semiconductor devices by presenting a modified physically based simulation method. A p-i-n diode microstrip circuit is taken as a sample, and its nonlinear characteristics, such as the power limiting, bistability, and forward recovery characteristics, are simulated and analysed. The applied method demonstrates its good capability and accuracy of modelling the nonlinear characteristics in the simulation, and moreover clarifies the underlying physical mechanisms. In contrast, the Advanced Design System (ADS) software, a popular circuit simulation program based on the equivalent circuit model, fails to reveal some of those nonlinear characteristics.

Citation:
H. Wang, G.-D. Wang, X.-L. Liu, K. Xu, and X. Chen, "Nonlinear Characteristics of P-I-n Diode Circuits Analyzed by a Physically Based Simulation Method," Progress In Electromagnetics Research Letters, Vol. 67, 117-123, 2017.
doi:10.2528/PIERL17010501

References:
1. Garver, R. V., Microwave Diode Control Devices, Artech House, Norwood, 1976.

2. White, J. F., Microwave Semiconductor Engineering, Van Nostrand, New York, 1982.
doi:10.1007/978-94-011-7065-9

3. Mantooth, H. A. and J. L. Duliere, "A uni ed diode model for circuit simulation," IEEE Transactions on Power Electronics, Vol. 12, 816-823, 1997.
doi:10.1109/63.622999

4. Kung, F. and H. T. Chuah, "Modeling of bipolar junction transistor in FDTD simulation of printed circuit board," Progress In Electromagnetics Research, Vol. 36, 179-192, 2002.
doi:10.2528/PIER02013001

5. Xiao, S.-Q., B.-Z. Wang, P. Du, and Z. Shao, "An enhanced FDTD model for complex lumped circuits," Progress In Electromagnetics Research, Vol. 76, 485-495, 2007.
doi:10.2528/PIER07073003

6. Buiatti, G. M., F. Cappelluti, and G. Ghione, "Physics-based PIN diode SPICE model for power- circuit simulation," IEEE Transactions on Industry Applications, Vol. 43, 911-919, 2007.
doi:10.1109/TIA.2007.900492

7. Lee, F. K. W. and H.-T. Chuah, "A nite-difference time-domain (FDTD) software for simulation of printed circuit board (PCB) assembly," Progress In Electromagnetics Research, Vol. 50, 299-335, 2005.
doi:10.2528/PIER04071401

8. Bellone, S., F. G. Della, L. F. Albanese, and F. Pezzimenti, "An analytical model of the forward I-V characteristics of 4H-SiC p-i-n diodes valid for a wide range of temperature and current," IEEE Transactions on Power Electronics, Vol. 26, 2835-2843, 2011.
doi:10.1109/TPEL.2011.2129533

9. Ciampolini, P., L. Roselli, G. Stopponi, and R. Sorrentiono, "Global modeling strategies fo the analysis of high-frequency integrated circuits," IEEE Transactions on Microwave Theory and Techniques, Vol. 47, 950-955, 1999.
doi:10.1109/22.769331

10. Grondin, R. O., S. M. El-Ghazaly, and S. Goodnick, "A review of global modeling of charge transport in semiconductors and full-wave electromagnetics," IEEE Transactions on Microwave Theory and Techniques, Vol. 47, 817-829, 1999.
doi:10.1109/22.769315

11. Tsai, H. P., R. Coccioli, and T. Itoh, "Time domain global modelling of EM propagation in semiconductor using irregular grids," International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 15, 355-370, 2002.
doi:10.1002/jnm.458

12. Chen, X., J. Q. Chen, K. Huang, and X. B. Xu, "A circuit simulation method based on physical approach for the analysis of Mot bal99lt1 pin diode circuits," IEEE Transactions on Electron Devices, Vol. 58, 2862-2870, 2011.
doi:10.1109/TED.2011.2159009

13. Chen, J. Q., X. Chen, C. J. Liu, K. Huang, and X. B. Xu, "Analysis of temperature effect on pin diode circuits by a multiphysics and circuit cosimulation algorithm," IEEE Transactions on Electron Devices, Vol. 59, 3069-3077, 2012.
doi:10.1109/TED.2012.2211602

14. Sze, S. M., Physics of Semiconductor Devices, Wiley, New York, 1981.

15. Sui, W. Q., Time-domain Computer Analysis of Nonlinear Hybrid Systems, CRC Press, Florida, 2002.

16. Lebedev, I. V. and N. V. Drozdovskii, "Bistability and electronic hysteresis of the amplitude characteristics of pin-diode structures," Journal of Communications Technology & Electronics, Vol. 39, 66-73, 1994.

17. Lebedev, I. V., et al., "Impedance properties of high-frequency pin diodes," Solid-State Electronics, Vol. 42, 121-128, 1998.
doi:10.1016/S0038-1101(97)00258-X

18. Drizdovski, N. and T. Takano, "Computer modeling of bistability effect in PIN diode limiter characteristic," IEEE Microwave and Guided Wave Letters, Vol. 10, 148-150, 2000.
doi:10.1109/75.846928


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