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High Impedance Transforming Dual-Band Balun with Isolation and Output Ports Matching

By Rahul Gupta, Md Maktoomi, Vikas Vikram Singh, and Mohammad S. Hashmi
Progress In Electromagnetics Research Letters, Vol. 81, 121-126, 2019


A dual-band balun with inherent impedance transformation is presented in this paper. The inherent impedance transformation ratio from a range of 0.4 to 4.0 makes the balun ideal for the on-chip fabrication. The proposed dual-band balun exhibits excellent input port matching, equal output signal with phase di erence of 180, and extremely good isolation and matching at the output ports. A table is provided with the design parameters at the extreme impedance transformation ratios. The design concept of the proposed balun has been validated through a prototype fabricated on a Rogers RO5880 substrate. The measurement results are in good agreement with the EM simulation measurements.


Rahul Gupta, Md Maktoomi, Vikas Vikram Singh, and Mohammad S. Hashmi, "High Impedance Transforming Dual-Band Balun with Isolation and Output Ports Matching," Progress In Electromagnetics Research Letters, Vol. 81, 121-126, 2019.


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