Vol. 93

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2020-08-31

A Low-Parasitic CMOS Transistor Structure for Wide Locking Range ILFD Design

By Hai Feng Zhou, Kam-Man Shum, and Chi Hou Chan
Progress In Electromagnetics Research Letters, Vol. 93, 43-47, 2020
doi:10.2528/PIERL20061501

Abstract

A wide locking range injection locked frequency divider (ILFD) with a low power consumption for 60GHz applications is presented. The locking range of the ILFD is enhanced by reducing the parasitic capacitances of the transistors. The cross-coupled transistor and injected transistors are integrated to become a compact structure, which exhibits simple routing and induces less parasitic capacitances. To verify the proposed structure, the ILFD was fabricated using 65 nm CMOS technology. It has a measured locking range of 55.3 GHz to 67 GHz (19%) with 0 dBm input power. The circuit dissipates 1.98 mW at 0.5 V supply voltage without the output buffers.

Citation


Hai Feng Zhou, Kam-Man Shum, and Chi Hou Chan, "A Low-Parasitic CMOS Transistor Structure for Wide Locking Range ILFD Design," Progress In Electromagnetics Research Letters, Vol. 93, 43-47, 2020.
doi:10.2528/PIERL20061501
http://www.jpier.org/PIERL/pier.php?paper=20061501

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