PIER M
 
Progress In Electromagnetics Research M
ISSN: 1937-8726
Home | Search | Notification | Authors | Submission | PIERS Home | EM Academy
Home > Vol. 22 > pp. 27-39

DEVICE SIMULATION OF EFFECTS OF MICROWAVE ELECTROMAGNETIC INTERFERENCE ON CMOS RS FLIP-FLOPS

By J. Chen and Z. Du

Full Article PDF (646 KB)

Abstract:
The study on effects of microwave electromagnetic interference on CMOS RS flip-flops is reported in this paper. Using device simulation method, the relation between the susceptibility of CMOS RS flip-flops and microwave electromagnetic interference frequency as well as pulse width has been analyzed. It is found that the effects of microwave electromagnetic interference get suppressed gradually with increasing frequency. Furthermore, the interference power threshold is inversely proportional to the pulse width, and the interference energy threshold is directly proportional to the pulse width conversely. In addition, because of the difference in the structure of these two categories of CMOS RS flip-flops, they have different susceptibility to microwave electromagnetic interference.

Citation:
J. Chen and Z. Du, "Device Simulation of Effects of Microwave Electromagnetic Interference on CMOS Rs Flip-Flops," Progress In Electromagnetics Research M, Vol. 22, 27-39, 2012.
doi:10.2528/PIERM11090806

References:
1. Backstrom, M. G. and K. G. Lovstrand, "Susceptibility of electronic systems to high-power microwaves: Summary of test experience," IEEE Trans. Electromag. Compat., Vol. 46, No. 3, 396-404, 2004.
doi:10.1109/TEMC.2004.831814

2. Nitsch, D., et al., "Susceptibility of some electronic equipment to HPEM threats," IEEE Trans. Electromag. Compat., Vol. 46, No. 3, 380-390, 2004.
doi:10.1109/TEMC.2004.831842

3. Hoad, R., N. J. Carter, D. Herke, et al., "Trends in EM susceptibility of IT equipment," IEEE Trans. Electromag. Compat., Vol. 46, No. 3, 390-396, 2004.
doi:10.1109/TEMC.2004.831815

4. Kim, K. and A. A. Iliadis, "Critical upsets of CMOS inverters in static operation due to high-power microwave interference," IEEE Trans. Electromag. Compat., Vol. 49, No. 4, 876-885, 2007.
doi:10.1109/TEMC.2007.908820

5. Kim, K. and A. A. Iliadis, "Impact of microwave interference on dynamic operation and power dissipation of CMOS inverters," IEEE Trans. Electromag. Compat., Vol. 49, No. 2, 329-338, 2007.
doi:10.1109/TEMC.2007.893333

6. Wang, H., J. Li, H. Li, K. Xiao, and H. Chen, "Experimental study and spice simulation of CMOS inverters latch-up effects due to high power microwave interference," Progress In Electromagnetics Research, Vol. 87, 313-330, 2008.
doi:10.2528/PIER08100408

7. Hong, J. I. , S. M. Hwang, and C. S. Huh, "Susceptibility of CMOS IC devices under narrow-band high power electromagnetic waves by magnetron," Journal of Electromagnetic Waves and Applications, Vol. 23, No. 5-6, 571-582, 2009.
doi:10.1163/156939309788019813

8. Wallace, R. E., S. G. Zaky, and K. G. Balmain, "Fast-transient susceptibility of a D-type flip-flop," IEEE Trans. Electromag. Compat., Vol. 37, No. 1, 75-80, 1995.
doi:10.1109/15.350243

9. Kashyap, S. , C. L. Gardner, and J. A. Walsh, "Upset of a flip-flop based counting circuit by EM transients," IEEE International Symposium on Electromagnetic Compatibility, Vol. 1, 233-238, 2001.

10. Chahine, I. , M. Kadi, E. Gaboriaud, A. Louis, and B. Mazari, "Characterization and modeling of the susceptibility of integrated circuits to conducted electromagnetic disturbances up to 1 GHz," IEEE Trans. Electromag. Compat., Vol. 50, No. 2, 285-293, May 2008.
doi:10.1109/TEMC.2008.918983

11. Chahine, I. , M. Kadi, E. Gaboriaud, X. Gallenne, A. Louis, and B. Mazari, "Enhancement of accuracy for measuring the susceptibility of integrated circuits to conducted electromagnetic disturbances," IET Sci. Meas. Technol., Vol. 1, No. 5, 240-244, Sep. 2007.
doi:10.1049/iet-smt:20060142

12. Chahine, I., M. Kadi, E. Gaboriaud, C. Maziere, A. Louis, and B. Mazari, "Modeling of integrated circuits susceptibility to conducted continuous wave interference using neural networks," IET Electron. Lett., Vol. 42, No. 18, 1022-1024, Aug. 2006.
doi:10.1049/el:20061903

13. Alaeldine, R. P., M. Ramdani, J.-L. Levant, and M. Drissi, "A direct power injection model for immunity prediction in integrated circuits," IEEE Trans. Electromag. Compat., Vol. 50, No. 1, 52-62, Feb. 2008.
doi:10.1109/TEMC.2007.911920

14. Xi, C. and Z. Du, "Effect of pulse repetition frequency on the semiconductor devices burnout caused by microwave pulses," International Review of Electrical Engineering --- IREE, Vol. 5, No. 5, 2500-2507, 2010.

15. MEDICI (TM), Version A-2008.09-0, , Synopsys, Inc.

16. Kim, K. and A. A. Iliadis, "Latch-up effects in CMOS inverters due to high power pulsed electromagnetic interference," Solid-State Electronics, Vol. 52, No. 10, 1589-1593, 2008.
doi:10.1016/j.sse.2008.06.041

17. Fang, J., et al., "Experimental study of the high power microwave pulse width effect," High Power Laser and Particle Beams, Vol. 19, No. 7, 1197-1202, 2007.


© Copyright 2010 EMW Publishing. All Rights Reserved