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2011-01-16

Large Signal Equivalent Circuit Model for Package AlGaN /GaN HEMT

By Lei Sang, Yuehang Xu, Yongbo Chen, Yunnchuan Guo, and Rui-Min Xu
Progress In Electromagnetics Research Letters, Vol. 20, 27-36, 2011
doi:10.2528/PIERL10110701

Abstract

In this paper, a large signal equivalent circuit empirical model based on Anglov model for ceramic packed high power AlGaN/GaN HEMT has been proposed. A temperature-dependent drain current model, including self-heating effect, has been presented, and good agreement is achieved between measurement results and the calculated results at different temperature. The nonlinear capacitance models are modeled by the directly measured microwave scattering (S) parameters and multi-bias small signal equivalent model (SSECM) of packed device. A power amplifier based on large size AlGaN/GaN HEMT with a total gate periphery of 36 mm has been designed by using the proposed model for validation purpose, and the simulated results fit the measurement results well at different temperature.

Citation


Lei Sang, Yuehang Xu, Yongbo Chen, Yunnchuan Guo, and Rui-Min Xu, "Large Signal Equivalent Circuit Model for Package AlGaN /GaN HEMT," Progress In Electromagnetics Research Letters, Vol. 20, 27-36, 2011.
doi:10.2528/PIERL10110701
http://www.jpier.org/PIERL/pier.php?paper=10110701

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