Vol. 130

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2012-08-20

Mixed-Mode Impedance and Reflection Coefficient of Two-Port Devices

By Carrillo Tomas Carrasco, Cordoba Javier Sieiro, José Mª Lopez-Villegas, Neus Vidal, Reinier Gonzalez-Echevarría, and Moreno Elisenda Roca
Progress In Electromagnetics Research, Vol. 130, 411-428, 2012
doi:10.2528/PIER12052906

Abstract

From the point of view of mixed-mode scattering parameters, Smm, a two-port device can be excited using different driving conditions. Each condition leads to a particular set of input reflection and input impedance coefficient definitions that should be carefully applied depending on the type of excitation and symmetry of the two-port device. Therefore, the aim of this paper is to explain the general analytic procedure for the evaluation of such reflection and impedance coefficients in terms of mixed-mode scattering parameters. Moreover, the driving of a two-port device as a one-port device is explained as a particular case of a two-port mixed-mode excitation using a given set of mixed-mode loads. The theory is applied to the evaluation of the quality factor, Q, of symmetrical and non-symmetrical inductors.

Citation


Carrillo Tomas Carrasco, Cordoba Javier Sieiro, José Mª Lopez-Villegas, Neus Vidal, Reinier Gonzalez-Echevarría, and Moreno Elisenda Roca, "Mixed-Mode Impedance and Reflection Coefficient of Two-Port Devices," Progress In Electromagnetics Research, Vol. 130, 411-428, 2012.
doi:10.2528/PIER12052906
http://www.jpier.org/PIER/pier.php?paper=12052906

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