Vol. 24

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2010-08-17

Electromagnetic Modeling of Outcoupling Efficiency and Light Emission in Near-Infrared Quantum Dot Light Emitting Devices

By Ahmed E. Farghal, Swelem Wageh, and Atef El-Sayed Abou El-Azm
Progress In Electromagnetics Research B, Vol. 24, 263-284, 2010
doi:10.2528/PIERB10070206

Abstract

We report an analytical exciton emission model based on Green function for simulating the radiation characteristics of near-infrared Quantum Dot-light emitting devices (QD-LEDs). In this model the internally emitted light can be classified into the following modes: substrate, indium tin oxide (ITO)/organic waveguided, surface plasmonic modes, and external emitted mode. We investigate the influence of the thickness of different layers and the distance between the emitting center and the cathode metal on the emitted power distribution among these modes. In addition, we study the angular radiation profile for the externally emitted radiation and substrate waveguided mode in comparison with lambartian radiation profile. We show the change of the thickness of the different layers, and the positions of the emitting centers are critical to the optical performance of the device. The optimization of optical performance through device geometry increases the outcoupling efficiency more than five times.

Citation


Ahmed E. Farghal, Swelem Wageh, and Atef El-Sayed Abou El-Azm, "Electromagnetic Modeling of Outcoupling Efficiency and Light Emission in Near-Infrared Quantum Dot Light Emitting Devices," Progress In Electromagnetics Research B, Vol. 24, 263-284, 2010.
doi:10.2528/PIERB10070206
http://www.jpier.org/PIERB/pier.php?paper=10070206

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