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2008-04-15
Numerical Analysis of Homojunction Avalanche Photodiodes (Apds)
By
Progress In Electromagnetics Research C, Vol. 3, 45-56, 2008
Abstract
In this paper we introduce a rigorous numerical analysis to investigate the characteristics of double carrier multiplication homojunction avalanche photodiodes (APDs) considering the nonlocal nature of the ionization process in the wide range of multiplication region width. Also in our calculations the effects of dead space has been considered. Our analyses based on the history dependent multiplication theory (HDMT) and width independent ionization coefficient.
Citation
Mir Hojjat Seyedi, "Numerical Analysis of Homojunction Avalanche Photodiodes (Apds)," Progress In Electromagnetics Research C, Vol. 3, 45-56, 2008.
doi:10.2528/PIERC08013004
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