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2011-12-05
250 MHz to 30 GHz , Unilateral Circuitmodel for Ingap/GaAs Hbt
By
Progress In Electromagnetics Research C, Vol. 26, 1-12, 2012
Abstract
A unilateral circuit model, which precisely predicts small signal response over a wide range of frequencies and bias points, is quantitatively analyzed and presented. The shortfall of current unilateral assumption and transformation technique is presented. A complete and explicit analysis is provided to develop a compact unilateral circuit model. The model is intended to predict input reflection, forward transmission and output reflection coefficients over wide range of frequencies. The technique is validated by transforming bilateral a small signal model of 3 x 3 μm x 40 μm, InGaP/GaAs HBT into its unilateral equivalent over the frequency range of 250 MHz to 30 GHz. The accuracy of the technique is corroborated at various bias conditions; collector current from 3 mA to 150 mA and collector-emitter voltage from 1 V to 5 V. Simulated results show very good agreement between small signal responses of transformed unilateral and bilateral circuit models.
Citation
Than Tun Thein Choi Look Law Kai Fu , "250 MHz to 30 GHz , Unilateral Circuitmodel for Ingap/GaAs Hbt," Progress In Electromagnetics Research C, Vol. 26, 1-12, 2012.
doi:10.2528/PIERC11101702
http://www.jpier.org/PIERC/pier.php?paper=11101702
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