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2012-11-12
Low-Insertion Loss PIN Diode Switches Using Impedance-Transformation Networks
By
Progress In Electromagnetics Research C, Vol. 34, 195-202, 2013
Abstract
Two SPDT switches that have low insertion loss with impedance-transformation networks are presented. The proposed SPDT switches are comprised of two shunt PINs and two quarter-wavelength microstrip lines together with impedance transformation networks, which canceled the capacitance effect at off-state and the inductance effect at on-state simultaneously. The simulated insertion loss performance is less than 0.3 dB and the fabricated ones exhibit on-state low insertion loss of 0.5 dB within the range of 4.6-4.8 GHz.
Citation
Mingming Liu Rong-Hong Jin Jun-Ping Geng Xianling Liang , "Low-Insertion Loss PIN Diode Switches Using Impedance-Transformation Networks," Progress In Electromagnetics Research C, Vol. 34, 195-202, 2013.
doi:10.2528/PIERC12092604
http://www.jpier.org/PIERC/pier.php?paper=12092604
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