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2008-01-08

An Support Vector Regression Based Nonlinear Modeling Method for SiC Mesfet

By Yuehang Xu, Yunnchuan Guo, Lei Xia, and Yunqiu Wu
Progress In Electromagnetics Research Letters, Vol. 2, 103-114, 2008
doi:10.2528/PIERL07122102

Abstract

An approach for the microwave nonlinear device modeling technique based on a combination of the conventional equivalent circuit model and support vector machine (SVM) regression is presented in this paper. The intrinsic nonlinear circuit elements are represented by Taylor series expansions, coefficients of which are predicted by its support vector regression (SVR) model. Example of a SiC MESFET nonlinear model is demonstrated, and good results is achieved.

Citation


Yuehang Xu, Yunnchuan Guo, Lei Xia, and Yunqiu Wu, "An Support Vector Regression Based Nonlinear Modeling Method for SiC Mesfet," Progress In Electromagnetics Research Letters, Vol. 2, 103-114, 2008.
doi:10.2528/PIERL07122102
http://www.jpier.org/PIERL/pier.php?paper=07122102

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