Vol. 2

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2008-01-03

Stark Effect in P-Type Delta-Doped Quantum Wells

By Adelina Miteva, Stoyan Vlaev, and Vesselin Donchev
Progress In Electromagnetics Research Letters, Vol. 2, 45-52, 2008
doi:10.2528/PIERL07122809

Abstract

In this work tight binding calculations in Be δ-doped GaAs quantum wells with an electric field applied along the [001] growth direction are presented. The Stark shifts of the hole electronic states for different impurity concentrations and electric field strengths are calculated. The δ-potential is treated as an external potential following the approach described earlier. A comparison with Stark effects in rectangular and graded-gap quantum wells is made.

Citation


Adelina Miteva, Stoyan Vlaev, and Vesselin Donchev, "Stark Effect in P-Type Delta-Doped Quantum Wells," Progress In Electromagnetics Research Letters, Vol. 2, 45-52, 2008.
doi:10.2528/PIERL07122809
http://www.jpier.org/PIERL/pier.php?paper=07122809

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