In this paper, a large signal equivalent circuit empirical model based on Anglov model for ceramic packed high power AlGaN/GaN HEMT has been proposed. A temperature-dependent drain current model, including self-heating effect, has been presented, and good agreement is achieved between measurement results and the calculated results at different temperature. The nonlinear capacitance models are modeled by the directly measured microwave scattering (S) parameters and multi-bias small signal equivalent model (SSECM) of packed device. A power amplifier based on large size AlGaN/GaN HEMT with a total gate periphery of 36 mm has been designed by using the proposed model for validation purpose, and the simulated results fit the measurement results well at different temperature.
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