volume | PIER Journals

Abstract

In this work, we report a novel phase change material: Hf-doped VO2(M1) with negligible thermal hysteresis width for low-power silicon photonic reconfigurable device applications. As dopant concentration rises from 0% to 3%, the material maintains the metal-insulator transition (MIT) property of VO2(M1) thin films, and the thermal hysteresis width significantly narrows from 7 ºC to <1 ºC, leading to a good control of material electrical and optical constants as a function of temperature. A ring resonator with Hf-doped VO2(M1) material partly deposited on the ring has been fabricated. Temperature dependent transmission spectrum of the device has been tested, which shows resonant peak shift due to the phase transition of Hf doped VO2(M1). Doping Hf makes this material become a promising candidate for a variety of silicon integrated reconfigurable photonic devices.

1. Ryckman, J. D., V. D. Blanco, J. Nag, R. E. Marvel, B. K. Choi, R. F. Haglund, and S. M. Weiss, "Photothermal optical modulation of ultracompact hybrid Si-VO₂ ring resonators," Opt. Express, Vol. 20, No. 12, 13215-13225, 2012.
doi:10.1364/OE.20.013215

2. Joushaghani, A., B. A. Kruger, S. Paradis, D. Alain, J. S. Aitchison, and J. K. S. Poon, "Sub-volt broadband hybrid plasmonic-vanadium dioxide switches," Appl. Phys. Lett., Vol. 102, No. 6, 325, 2013.
doi:10.1063/1.4790834

3. Chen, S., J. J. Liu, L. H. Wang, H. J. Luo, and Y. F. Gao, "Unraveling mechanism on reducing thermal hysteresis width of VO₂ by Ti doping: A joint experimental and theoretical study," J. Phys. Chem. C, Vol. 118, No. 33, 18938-18944, 2014.
doi:10.1021/jp5056842

4. Mai, L. Q., B. Hu, T. Hu, W. Chen, and E. D. Gu, "Electrical property of Mo-doped VO₂ nanowire array film by melting-quenching Sol-Gel Method," J. Phys. Chem. B, Vol. 110, No. 39, 19083-19086, 2006.
doi:10.1021/jp0642701

5. Manolatou, C. and M. Lipson, "All-optical silicon modulators based on carrier injection by twop-hoton absorption," J. Lightwave Technol., Vol. 24, No. 3, 1433-1438, 2006.
doi:10.1109/JLT.2005.863326

6. Thompson, D., O. Tantot, H. Jallageas, G. Tentzeris, and J. Papapolymerou, "Characterization of Liquid Crystal Polymer (LCP) material and transmission lines on LCP substrates from 30 to 110 GHz," IEEE T. Microw. Theory, Vol. 52, No. 4, 1343-1351, 2004.
doi:10.1109/TMTT.2004.825738

7. Oka, Y., T. Yao, N. Yamamoto, Y. Ueda, and A. Hayashi, "Phase transition and V⁴⁺-V⁴⁺ pairing in VO₂(B)," J. Solid State Chem., Vol. 105, No. 1, 271-278, 1993.
doi:10.1006/jssc.1993.1215

8. Liu, H., D. Wan, A. Ishaq, L. Chen, B. Guo, S. Shi, H. Luo, and Y. Gao, "Sputtering deposition of sandwich-structured V₂O₅/Metal (V,W)/V₂O₅ multilayers for the preparation of high-performance thermally sensitive VO₂ thin films with selectivity of VO₂ (B) and VO₂ (M) polymorph," ACS Appl. Mater. Inter., Vol. 8, No. 12, 7884-7890, 2016.
doi:10.1021/acsami.6b00391

9. Ryckman, J. D., V. Diez-Blanco, J. Nag, R. E. Marvel, and S. M. Weiss, "Photothermal optical modulation of ultracompact hybrid Si-VO₂ ring resonators," Opt. Express, Vol. 20, No. 12, 13215-13225, 2012.
doi:10.1364/OE.20.013215

10. Nawrocka, M. S., T. Liu, X. Wang, and R. Panepucci, "Tunable silicon microring resonator with wide free spectral range," Appl. Phys. Lett., Vol. 89, 071110, 2006.
doi:10.1063/1.2337162

11. Nag, J., J. Ryckman, M. T. Hertkorn, B. K. Choi, and S. M. Weiss, "Ultrafast compact silicon-based ring resonator modulators using metal-insulator switching of vanadium dioxide," Proceedings of SPIE --- The International Society for Optical Engineering, March 2010.

Dr. Taixing Huang

Dr. Qingyang Du

Dr. Tongtong Kang

Dr. Jianliang Xie

Dr. Long-Jiang Deng

Dr. Juejun Hu

Prof. Lei Bi