Vol. 76

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2018-06-12

Metal-Insulator Transition Property of HF-Doped VO2(M1) Films and its Application for Reconfigurable Silicon Photonic Device

By Taixing Huang, Qingyang Du, Tongtong Kang, Jianliang Xie, Long-Jiang Deng, Juejun Hu, and Lei Bi
Progress In Electromagnetics Research Letters, Vol. 76, 133-139, 2018
doi:10.2528/PIERL18022602

Abstract

In this work, we report a novel phase change material: Hf-doped VO2(M1) with negligible thermal hysteresis width for low-power silicon photonic reconfigurable device applications. As dopant concentration rises from 0% to 3%, the material maintains the metal-insulator transition (MIT) property of VO2(M1) thin films, and the thermal hysteresis width significantly narrows from 7 ºC to <1 ºC, leading to a good control of material electrical and optical constants as a function of temperature. A ring resonator with Hf-doped VO2(M1) material partly deposited on the ring has been fabricated. Temperature dependent transmission spectrum of the device has been tested, which shows resonant peak shift due to the phase transition of Hf doped VO2(M1). Doping Hf makes this material become a promising candidate for a variety of silicon integrated reconfigurable photonic devices.

Citation


Taixing Huang, Qingyang Du, Tongtong Kang, Jianliang Xie, Long-Jiang Deng, Juejun Hu, and Lei Bi, "Metal-Insulator Transition Property of HF-Doped VO2(M1) Films and its Application for Reconfigurable Silicon Photonic Device," Progress In Electromagnetics Research Letters, Vol. 76, 133-139, 2018.
doi:10.2528/PIERL18022602
http://www.jpier.org/PIERL/pier.php?paper=18022602

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