Vol. 22

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2011-11-15

Device Simulation of Effects of Microwave Electromagnetic Interference on CMOS Rs Flip-Flops

By Jie Chen and Zhengwei Du
Progress In Electromagnetics Research M, Vol. 22, 27-39, 2012
doi:10.2528/PIERM11090806

Abstract

The study on effects of microwave electromagnetic interference on CMOS RS flip-flops is reported in this paper. Using device simulation method, the relation between the susceptibility of CMOS RS flip-flops and microwave electromagnetic interference frequency as well as pulse width has been analyzed. It is found that the effects of microwave electromagnetic interference get suppressed gradually with increasing frequency. Furthermore, the interference power threshold is inversely proportional to the pulse width, and the interference energy threshold is directly proportional to the pulse width conversely. In addition, because of the difference in the structure of these two categories of CMOS RS flip-flops, they have different susceptibility to microwave electromagnetic interference.

Citation


Jie Chen and Zhengwei Du, "Device Simulation of Effects of Microwave Electromagnetic Interference on CMOS Rs Flip-Flops," Progress In Electromagnetics Research M, Vol. 22, 27-39, 2012.
doi:10.2528/PIERM11090806
http://www.jpier.org/PIERM/pier.php?paper=11090806

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