Vol. 27

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2012-11-27

Ldmos Modeling and High Efficiency Power Amplifier Design Using PSO Algorithm

By Mohammad Jahanbakht and Mohammad Tondro.Aghmyoni
Progress In Electromagnetics Research M, Vol. 27, 219-229, 2012
doi:10.2528/PIERM12070703

Abstract

A simple and nonlinear LDMOS transistor model with multi-bias consideration has been proposed. Elements of the model are optimizes using particle swarm optimization (PSO) algorithm to fit the measured RF specifications of a typical transistor. The developed model is used then to design a high efficiency power amplifier with 55% power added efficiency (PAE) at 33 dBm output power with 12 dB power gain. This amplifier has a novel topology with optimized BALUN and microstrip matching network which makes it unconditionally stable and extensively linear over UHF frequency range of 100 MHz to 1 GHz with 163% fractional bandwidth. This power amplifier is fabricated and realized with 12-V supply voltage. A good agreement between simulated and measured values observed, indicating high accuracy of either the model and the amplifier design approach.

Citation


Mohammad Jahanbakht and Mohammad Tondro.Aghmyoni, "Ldmos Modeling and High Efficiency Power Amplifier Design Using PSO Algorithm," Progress In Electromagnetics Research M, Vol. 27, 219-229, 2012.
doi:10.2528/PIERM12070703
http://www.jpier.org/PIERM/pier.php?paper=12070703

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