Vol. 48

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2016-05-04

A Dual-Polarized Switchable Active Frequency Selective Surface for LTE-D Band

By Chenchen Yang, Huangyan Li, Qunsheng Cao, and Yi Wang
Progress In Electromagnetics Research M, Vol. 48, 77-85, 2016
doi:10.2528/PIERM16012003

Abstract

A dual-polarized active frequency selective surface (AFSS) with switch function at LTE-D band is proposed in this paper. Double coupled metallic meandered structures on a one-layer substrate loaded PIN diodes are designed carefully to realize the band-pass characteristic at 2.6 GHz when PINs are OFF and the rejection characteristic when PINs are ON. The proposed model requires no additional biasing lines, and the amount of PINs is acceptable and affordable, which contribute to the simplicity and practicality of this AFSS in real applications. A simple equivalent circuit model (ECM) is given to better understand the design. Through full-wave simulation results, the polarization characteristics under TE and TM are almost the same, and the angle-stability stays well till 45˚. For necessary verification, one finite FSS prototype was fabricated, which was changed to one switchable AFSS by welding PINs and external feeder lines. The measured results of transmission coefficient are obtained by free space test method in the microwave anechoic chamber and agree well with the simulated ones.

Citation


Chenchen Yang, Huangyan Li, Qunsheng Cao, and Yi Wang, "A Dual-Polarized Switchable Active Frequency Selective Surface for LTE-D Band," Progress In Electromagnetics Research M, Vol. 48, 77-85, 2016.
doi:10.2528/PIERM16012003
http://www.jpier.org/PIERM/pier.php?paper=16012003

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