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Progress In Electromagnetics Research
ISSN: 1070-4698, E-ISSN: 1559-8985
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TWO NOVEL STRUCTURES FOR TUNABLE MEMS CAPACITOR WITH RF APPLICATIONS

By E. Abbaspour-Sani, N. Nasirzadeh, and G. R. Dadashzadeh

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Abstract:
Two novel structures for high-Q MEMS tumble capacitors are presented. The proposed designs include full plate as well as the comb structured capacitors. They can be fabricated employing surface micromachining technology which is CMOS-compatible. The structures do not require the cantilever beams which introduce considerable series resistance to the capacitor and decrease the quality factor. Therefore, our proposed structures achieve better Q in a smaller die area. The simulated results for 1 pF full plate capacitor shows a tuning range of 42% and a Q of 47 at 1 GHz. However, with the same initial capacitance, but the comb structure, the tuning range is increased to 43% but the Q is decreased to 45 at 1 GHz. The simulated Pull-in voltage with no residual stress is 3.5 V for both capacitors. The S11 responses are reported for a frequency range from 1 up to 4 GHz.

Citation: (See works that cites this article)
E. Abbaspour-Sani, N. Nasirzadeh, and G. R. Dadashzadeh, "Two Novel Structures for Tunable MEMS Capacitor with RF Applications," Progress In Electromagnetics Research, Vol. 68, 169-183, 2007.
doi:10.2528/PIER06081404
http://www.jpier.org/PIER/pier.php?paper=06081404

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