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Progress In Electromagnetics Research Letters
ISSN: 1937-6480
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TRANSPORT PROPERTIES OF DELTA-DOPED FIELD EFFECT TRANSISTOR

By O. Oubram and L. M. Gaggero-Sager

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Abstract:
The first calculation of mobility and conductivity between source and drain as function of gate voltage in a δ-doped Field Effect Transistor is presented. The calculation was performed with a model for the δ-FET that was shown in [1]. The mobility was calculated using a phenomenological expression that was presented in [2]. That expression does not have empirical form, neither empirical parameter. For the first time a phenomenological expression of the conductivity is presented, which is derived from the mobility expression. The conductivity shows three different regions: a parabolic region and two linear regions. The parabolic region represents the region at which the conduction channel begins to close. On the other hand, the mobility shows a more different behavior. In the mobility there are four regions. These regions correspond to the disappearance of the different conduction channels that form the subbands of the deltadoped quantum well. The different behavior between mobility and conductivity relies on the depletion of the delta-doped quantum well as the gate potential grows.

Citation:
O. Oubram and L. M. Gaggero-Sager, "Transport Properties of Delta-Doped Field Effect Transistor," Progress In Electromagnetics Research Letters, Vol. 2, 81-87, 2008.
doi:10.2528/PIERL07122810

References:
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7. Gaggero-Sager, L. M. and R. Perez-Alvarez, "A simple model for delta-doped field-effect transistor electronic states," J. Appl.Phys., Vol. 78, No. 7, 4566-4569, 1995.
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