Vol. 79

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2018-11-15

Investigation of a Silicon-Based High Integration Reconfigurable Dipole

By Han Su, Huiyong Hu, Heming Zhang, and Yuanhao Miao
Progress In Electromagnetics Research Letters, Vol. 79, 135-141, 2018
doi:10.2528/PIERL18071701

Abstract

In this paper, an on-chip high integration reconfigurable dipole with band stop filters was demonstrated. This antenna was fabricated on a high resistivity silicon wafer, and several optimized band stop filters were introduced into antenna system to replace conventional inductors and capacitors. The measured results show that the stopband of this filter can meet the requirements of the designed dipole. This method will greatly improve the integration of antenna system. On the basis of structural optimization, the proposed reconfigurable dipole realized two resonant frequencies at 1.33 GHz and 1.65 GHz, and the radiation patterns also showed satisfactory results.

Citation


Han Su, Huiyong Hu, Heming Zhang, and Yuanhao Miao, "Investigation of a Silicon-Based High Integration Reconfigurable Dipole," Progress In Electromagnetics Research Letters, Vol. 79, 135-141, 2018.
doi:10.2528/PIERL18071701
http://www.jpier.org/PIERL/pier.php?paper=18071701

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