volume | PIER Journals

2007-12-10

Enhancement of the Electronic Confinement Improves the Mobility in P-n -P Delta-Doped Quantum Wells in Si

Augusto Ariza-Flores,

Dr. Augusto Ariza-Flores

Facultad de Ciencias

Universidad Autonoma del Estado de Morelos

Mexico

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Isaac Rodríguez-Vargas

Dr. Isaac Rodríguez-Vargas

Unidad Académica de Física

Universidad Autónoma de Zacatecas

Mexico

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Progress In Electromagnetics Research Letters, Vol. 1, 167-172, 2008

doi:10.2528/PIERL07120606

Abstract

The electronic structure and mobility trends in a n-type delta-doped quantum well in Si, matched between p-type delta-doped barriers of the same material, is presented. The distance between the n-type well and p-type barriers is varied from 50A to 500A; and also the impurity density from 5 × 10¹² cm^-2 to 5 × 10¹³ cm^-2, for both, donors and acceptors. An increase in the mobility by a factor of 1.6 at interwell distance of 50A with donor and acceptor concentrations of 5 × 10¹² cm^-2 and 5 × 10¹³ cm^-2 compared with a single delta-doped well without p-type barriers is found. This improvement in mobility could be attributed to a better confinement of carriers, which favors excited levels with nodes in the donor plane. This trade-off between carrier concentration and mobility could be exploited in high-speed, high-power and high-frequency applications.

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Augusto Ariza-Flores, and Isaac Rodríguez-Vargas, "Enhancement of the Electronic Confinement Improves the Mobility in P-n -P Delta-Doped Quantum Wells in Si," Progress In Electromagnetics Research Letters, Vol. 1, 167-172, 2008.
doi:10.2528/PIERL07120606

References

1. Gossmann, H.-J. and F. C. Unterwald, "Dopant electrical activity and majority-carrier mobility in B- and Sb-δ-doped Si thin films," Phys. Rev. B, Vol. 47, No. 19, 12618-12624, 1993.
doi:10.1103/PhysRevB.47.12618

2. Zudov, M. A., C. L. Yang, R. R. Du, T.-C. Shen, J.-Y. Ji, J. S. Kline, and J. R. Tucker, "Weak localization in ultradense 2D electron gas in δ-doped Silicon," Condmat/0305482, (unpublished).

3. Goh, K. E. J., L. Oberbeck, M. Y. Simmons, A. R. Hamilton, and M. J. Butcher, "Influence of doping density on electronic transport in degenerate Si: P δ-doped layers," Phys. Rev. B, Vol. 73, No. 3, 035401, 2006.

4. Ando, T., A. B. Fowler, and F. Stern, "Electronic properties of two-dimensional systems," Rev. Mod. Phys., Vol. 54, No. 2, 437-672, 1982.
doi:10.1103/RevModPhys.54.437

5. Rodriguez-Vargas, I. and L. M. Gaggero-Sager, "Subband and transport calculations in double n-type δ-doped quantum wells in Si," J. Appl. Phys., Vol. 99, No. 3, 033702, 2006.

6. Gurtovoi, V. L., V. V. Valyaev, S. Yu Shapoval, and A. N. Pustovit, "Electron transport properties of double deltadoped GaAs structures grown by low-pressure metalorganic chemical vapor deposition," Appl. Phys. Lett., Vol. 72, No. 10, 1202-1204, 1998.
doi:10.1063/1.121013

7. Rodriguez-Vargas, I., L. M. Gaggero-Sager, and V. R. Velasco, "Thomas-Fermi-Dirac theory of the hole gas of a double p-type δ-doped GaAs quantum wells," Surf. Sci., Vol. 537, No. 1, 75-83, 2003.
doi:10.1016/S0039-6028(03)00546-6

8. Gaggero-Sager, L. M., N. Moreno-Martinez, I. Rodriguez-Vargas, R. Perez-Alvarez, V. V. Grimalsky, and M. E. Mora-Ramos, "Electronic structure as a function of temperature for Si δ-doped quantum wells in GaAs," PIERS Online, Vol. 3, No. 6, 851-854, 2007.
doi:10.2529/PIERS061006210621

9. Gaggero-Sager, L. M., M. E. Mora-Ramos, and D. A. Contreras-Solorio, "Thomas-Fermi approximation in p-type δ-doped quantum wells of GaAs and Si," Phys. Rev. B, Vol. 57, No. 11, 6286-6289, 1998.
doi:10.1103/PhysRevB.57.6286

10. Rodriguez-Vargas, I. and L. M. Gaggero-Sager, "Hole-level structure of double δ-doped quantum wells in Si: The influence of the split-off band," Physica B, Vol. 389, No. 2, 227-233, 2007.
doi:10.1016/j.physb.2006.06.154