PIER
 
Progress In Electromagnetics Research
ISSN: 1070-4698, E-ISSN: 1559-8985
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PROPERTIES OF ELECTROMAGNETIC FIELDS AND EFFECTIVE PERMITTIVITY EXCITED BY DRIFTING PLASMA WAVES IN SEMICONDUCTOR-INSULATOR INTERFACE STRUCTURE AND EQUIVALENT TRANSMISSION LINE TECHNIQUE FOR MULTI-LAYERED STRUCTURE

By F. Mustafa and A. M. Hashim

Full Article PDF (414 KB)

Abstract:
Strong interests are recently emerging for development of solid-state devices operating in the so-called "terahertz gap" region for possible application in radio astronomy, industry and defense. To fill the THz gap by using conventional electron approach or transit time devices seems to be very difficult due to the limitation that comes from the carrier transit time where extremely small feature sizes are required. One way to overcome this limitation is to employ the traveling wave type approach in semiconductors like classical traveling wave tubes (TWTs) where no transit time limitation is imposed. In this paper, the analysis method to analyze the properties of drifting plasma waves in semiconductor-insulator structure based on the transverse magnetic (TM) mode analysis is presented. Two waves components (quasi-lamellar wave and quasisolenoidal wave), electromagnetic fields (Ey, Ez and Hx) and ω-and k-dependent effective permittivity are derived where these parameters are the main parameters to explain the interaction between propagating electromagnetic waves and drifting carrier plasma waves in semiconductor. A method to determine the surface impedances in semiconductor-insulator multi-layered structure using equivalent transmission line representation method is also presented since multi-layered structure is also a promising structure for fabricating such a so-called plasma wave device.

Citation:
F. Mustafa and A. M. Hashim, "Properties of Electromagnetic Fields and Effective Permittivity Excited by Drifting Plasma Waves in Semiconductor-Insulator Interface Structure and Equivalent Transmission Line Technique for Multi-Layered Structure," Progress In Electromagnetics Research, Vol. 104, 403-425, 2010.
doi:10.2528/PIER10041504
http://www.jpier.org/PIER/pier.php?paper=10041504

References:
1. Solymar, L. and E. Ash, "Some travelling-wave interactions in semiconductors theory and design considerations," Int. J. Electronics, Vol. 20, No. 2, 127-148, 1966.
doi:10.1080/00207216608937858

2. Sumi, M., "Travelling-wave amplification by drifting carriers in semiconductors," Appl. Phys. Lett., Vol. 9, No. 6, 251-253, 1966.
doi:10.1063/1.1754735

3. Sumi, M., "Traveling-wave amplification by drifting carriers in semiconductors," Jpn. J. Appl. Phys., Vol. 6, No. 6, 688-698, 1967.
doi:10.1143/JJAP.6.688

4. Zotter, B., Traveling-wave amplification by drifting carriers in Semiconductor, Vol. 2958, 1 US Army ECOM Rept., 1968.

5. Steele, M. C. and B. Vural, Wave Interactions in Solid State Plasmas, Chap. 12, McGraw-Hill, New York, 1969.

6. Ettenberg, M. and J. S. Nadan, "The theory of the interaction of drifting carriers in a semiconductor with external traveling-wave circuits," IEEE Trans. Electron. Devices, Vol. 17, 219-233, 1970.
doi:10.1109/T-ED.1970.16957

7. Sumi, M. and T. Suzuki, "Evidence for directional coupling between semiconductor carriers and slow circuit waves," Appl. Phys. Lett., Vol. 13, No. 9, 326-327, 1968.
doi:10.1063/1.1652634

8. Freeman, J. C., V. L. Newhouse, and R. L. Gunshor, "Interactions between slow circuit waves and drifting carriers in InSb and Ge at 4.2 K," Appl. Phys. Lett., Vol. 22, 641-643, 1973.
doi:10.1063/1.1654538

9. Thompson, J. J., M. R. S. Taylor, A. M. Thompson, S. P. Beaumont, and N. Apsley, "Gallium arsenide solid state travelling wave amplifier at 8 GHz," Electronics Letters, Vol. 27, No. 6, 516-518, 1991.
doi:10.1049/el:19910324

10. Hashim, A. M., T Hashizume, K. Iizuka, and H. Hasegawa, "Plasma wave interactions in the microwave to THz range between carriers in a semiconductor 2deg and interdigital slow waves ," Superlattices Microstruct, Vol. 34, 531-537, 2003.
doi:10.1016/j.spmi.2004.03.054

11. Mustafa, F. and A. M. Hashim, "Generalized 3D transverse magnetic mode method for analysis of interaction between drifting plasma waves in 2deg-structured semiconductors and electromagnetic space harmonic waves," Progress In Electromagnetics Research, Vol. 102, 315-335, 2010.

12. Iizuka, K., A. M. Hashim, and H. Hasegawa, "Surface plasma wave interactions between semiconductor and electromagnetic space harmonics from microwave to THz range," Thin Solid Films, Vol. 464-465, 464-468, 2003.

13. Hashim, A. M., S. Kasai, T. Hashizume, and H. Hasegawa, "Large modulation of conductance in interdigital-gated HEMT devices due to surface plasma wave interactions," Jpn. J. Appl. Phys., Vol. 44, 2729-2734, 2005.
doi:10.1143/JJAP.44.2729

14. Hashim, A. M., S. Kasai, T. Hashizume, and H. Hasegawa, "Integration of interdigital-gated plasma wave device for proximity communication system application," Microelectronics Journal, Vol. 38, 1263-1267, 2007.

15. Hashim, A. M., S. Kasai, K. Iizuka, T. Hashizume, and H. Hasegawa, "Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier," Microelectronics Journal, Vol. 38, 1268-1272, 2007.

16. Kino, G. S., "Carrier waves in semiconductors --- Part I: Zero temperature theory," IEEE Trans. Electron. Devices, Vol. 17, 178-192, 1970.
doi:10.1109/T-ED.1970.16952

17. Blotekjaer, K., "Transport equations for electrons in two-valley semiconductors," IEEE Trans. Electron. Devices, Vol. 17, No. 38, 38-47, 1970.
doi:10.1109/T-ED.1970.16921

18. Mizushima, Y. and T. Sado, "Surface wave amplification between parallel semiconductors," IEEE Trans. Electron. Devices, Vol. 17, No. 7, 541-549, 1970.
doi:10.1109/T-ED.1970.17027

19. Steele, M. C. and B. Vural, Wave Interactions in Solid State Plasmas, Chap. 11, McGraw-Hill, New York, 1969.

20. Hashim, A. M., Plasma waves in semiconductors and their interactions with electromagnetic waves up to terahertz region, Ph.D. thesis, Hokkaido University, 2006.


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