volume | PIER Journals

Abstract

A free-space, non-destructive method for measuring the complex permittivity of a double-layer bulk dielectrics and thin film oxide layers at microwave frequencies have been developed. The method utilizes a spot-focusing antenna system in conjunction with a vector network analyzer in the range of 18-26 GHz. The bulk dielectric was measured using the Transmission Method and Metal-Backed Method, while the Metal-Backed Method was used to investigate the thin films. Both types of samples were sandwiched between two quarter-wavelength Teflon plates to improve the mismatch at the frequencies of measurement. The thin film sample arrangement was backed by an additional metal plate. The double-layer bulk dielectric samples were Teflon-PVC and Plexiglas-PVC, while the thin film samples consisted of SiO₂ layers of different thicknesses grown on doped and undoped Si wafer substrates. The relative permittivity obtained for PVC ranged between 2.62 to 2.93, while those for Plexiglas exhibited values between 2.45 to 2.63. The relative permittivity of SiO₂ deposited on these wafers was between 3.5 to 4.5. All these values were in good agreement with published data The advantage of the method was its ability to measure the dielectric properties of the films at the mid-frequency band irrespective of the substrate type used. Simulations of the measurement setup were carried out using CST Microwave Studio and the simulation results agreed closely with the measurements.

1. Hambley, A. R., Electronics, 2nd Ed., Prentice-Hall International, Inc., New Jersey, 2000.

2. Ahmad, S., Microwave and Millimeter Wave Semiconductor Materials Technology, Tata McGraw-Hill, New York, 1998.

3. Baba, N. H., Z. Awang, and D. K. Ghodgaonkar, "Accuracy considerations for dielectric measurements of semiconductor wafers using free space microwave measurement system in 8-13 GHz range," Proc. IEEE Int. RF and Microwave Conf. (RFM), 177-181, Kuala Lumpur, Oct. 5-6, 2004.

4. Saad, T. S., R. C. Hansen, and G. J. Wheeler, Microwave Engineers' Handbook, Vol. 1, 179, Artech House, Boston, 1971.

5. Ghodgaonkar, D. K., V. V. Varadan, and V. K. Varadan, "Free-space measurement of complex permittivity and complex permeability of magnetic materials at microwave frequencies," IEEE Trans. of Inst. and Measurement, Vol. 39, No. 2, 387-394, Apr. 1990.
doi:10.1109/19.52520 Google Scholar

6. Srivastava, G. P. and V. L. Gupta, Microwave Devices and Circuit Design, Prentice-Hall India, New Delhi, 2006.

7. Ghodgaonkar, D. K., V. V. Varadan, and V. K. Varadan, "A free-space method for measurement of dielectric constants and loss tangents at microwave frequencies," IEEE Trans. of Inst. and Measurement, Vol. 38, No. 3, 789-793, Jun. 1989.
doi:10.1109/19.32194 Google Scholar

8. Baba, N. H., Microwave Non-destructive Testing of Semiconductor Materials, M.Sc. thesis, Universiti Teknologi MARA, Apr. 2005.

9. Millitech, Inc., Series GOA Gaussian Optics Lens Antenna.

10. Hippel, A. V., Dielectric Materials and Applications, Artech House, Boston, 1995.

11. Zant, P. V., Microchip Fabrication, 5th Ed., McGraw-Hill, New York, 2004.

12. Kasap, S. O., Principles of Electronic Materials and Devices, 2nd Ed., McGraw-Hill, New York, 2002.

13. Kawate, E. and B. Prijamboedi, "Development of the measurement method of dielectric constant of low-k film in the millimeter wave region," Proc. Joint 29th Int. Conf. on Infrared and Millimeter Waves and 12th Int. Conf. on Terahertz Electronics, 801-802, Karlsruhe, Germany, Oct. 2004.

14. Bakker, G. L. and D. W. Hess, "Removal of thermally grown SiO₂ films using water at elevated temperature and pressure," Electrochem. Soc. Proc., Vol. 95-20, 464-471, 1996. Google Scholar

15. Harper, C. A., Handbook of Ceramics, Glasses and Diamonds, McGraw-Hill, New York, 2001.

16. Baker-Jarvis, J., et al. "Dielectric characterization of low-loss materials: A comparison technique," IEEE Trans. Dielectric Elect. Ins., Vol. 5, No. 4, 571-577, Aug. 1998.
doi:10.1109/94.708274 Google Scholar

17. Albertin, K. F., M. A. Valle, and I. Pereyra, "Study of MOS capacitors with TiO₂ and SiO2/TiO₂ gate dielectric," J. Int. Cir. Systems, Vol. 2, 89-93, 2007. Google Scholar

18. Shackelford, J. F., W. Alexander, and J. S. Park, Materials Science and Engineering, 2nd Ed., CRC Press, Inc., Boca Raton, 1994.

19. May, G. S. and S. M. Sze, Fundamentals of Semiconductor Fabrication, John Wiley and Sons, New York, 2004.

20. Schroder, D. K., Semiconductor Material and Device Characterization, 2nd Ed., John Wiley & Sons, Inc., New York, 2004.

21. Hadi, D. A., S. F. W. M. Hatta, and N. Soin, "Effect of oxide thickness on 32nm PMOSFET reliability," Proc. IEEE Int. Conf. on Semicond. Electron. (ICSE), 244-247, Jun. 28-30, 2010.

22. Mahapatra, S., M. A. Alam, P. B. Kumar, T. R. Dalei, D. Varghese, and D. Saha, "Negative bias temperature instability in CMOS devices," Microelectronics Eng., Vol. 80, 114-121, 2005.
doi:10.1016/j.mee.2005.04.053 Google Scholar

23. Alam, M. A., H. Ku°uoglu, D. Varghese, and S. Mahapatra, "A comprehensive model for PMOS NBTI degradation: Recent progress," Microelectronics Rel., Vol. 47, 853-862, Dec. 2006. Google Scholar

24. Kwan, W. S. and M. J. Deen, "Hot-carrier effects on the scattering parameters of lightly doped drain n-type metal-oxide-semiconductor field effect transistor ," J. Vac. Sci. Technol., Vol. 16, No. 2, 628-632, Jan. 1998. Google Scholar

25. Nevin, W. A. and G. A. Chamberlain, "Effect of oxide thickness on the properties of metal-insulator-organic semiconductor photovoltaic cells," IEEE Trans. on Electron. Devices, Vol. 40, No. 1, 75-81, Jan. 1993.
doi:10.1109/16.249427 Google Scholar

26. Burkhardt, P. J., "Dielectric relaxation in thermally grown SiO₂ films," IEEE Trans. on Elect. Dev., Vol. 13, No. 2, 268-275, Feb. 1966.
doi:10.1109/T-ED.1966.15679 Google Scholar

27. Ismail, M. Y., M. Inam, and A. M. A. Zaidi, "Reflectivity of reflectarrays based on dielectric substrates," Amer. J. of Eng. Appl. Sci., Vol. 3, No. 1, 180-185, 2010.
doi:10.3844/ajeassp.2010.180.185 Google Scholar

28. Wheeler, H. A., "Formulas for the skin effect," Proc. of the IRE, Vol. 30, No. 9, 412-424, Sept. 1942.

29. Bichara, M. R. E. and J. P. R. Poitevin, "Resistivity measurement of semiconducting epitaxial layers by the reflection of a hyperfrequency electromagnetic wave," IEEE Trans. Inst. Meas., Vol. 13, 323-328, Dec. 1964.
doi:10.1109/TIM.1964.4313421 Google Scholar

Dr. Zaiki Awang

Dr. Fatimah Audah Mohd Zaki

Dr. Noor Hasimah Baba

Dr. Ahmad Sabirin Zoolfakar

Dr. Raudah Abu Bakar