A Generalized Design Procedure for a Microwave Amplifier: a Typical Application Example
In this work, a generalized procedure is carried out for the design of a microwave amplifier. First of all, the Performance Data Sheets (PDS) resulted from the active device characterization are used as Feasible Design Target Space (FDTS). Employing the PDS, the compatible (Noise F, Input VSWR Vi, Gain GT ) is determined over the predetermined bandwidth B between fmin and fmax operation frequencies with the source ZS and load ZL terminations as the design target. In the design stage, the Simplified Real Frequency Technique (SRFT) is utilized in the scattering-parameter formulation of the front- and back-end matching two-ports to provide the source and load terminations to the transistor, respectively. As an application example, a novel high technology transistor is chosen and the design targets are determined using the PDSs of the device and its frontand back-end matching two-ports are characterized by the scatteringparameters using the novel SRFT for each design target. Furthermore, the performances of the resulted amplifier circuits are analyzed and compared with the simulated results.