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2013-04-13

Design of an S-Band Two-Way Inverted Asymmetrical Doherty Power Amplifier for Long Term Evolution Applications

By Hai-Jin Zhou and Hua-Feng Wu
Progress In Electromagnetics Research Letters, Vol. 39, 73-80, 2013
doi:10.2528/PIERL13032010

Abstract

In this article, an S-band two-way inverted asymmetrical Doherty power amplifier (IADPA) using LDMOS FET is proposed. Due to the compact inverted load network with low inserted loss and the asymmetrical structure, the amplifier exhibits a high efficiency when operating at an output power back-off beyond 6 dB. For experimental verification, an IADPA has been implemented and a modulated Long Term Evolution (LTE) signal with 20-MHz channel bandwidth is applied as excitation. According to the measured results, the proposed amplifier can achieve a drain efficiency of 47.6% at the output power back-off of 7.7 dB from saturated power point and an adjacent channel power ratio (ACPR) less than -53 dBc with digital pre-distortion (DPD) when operating at 2.65 GHz.

Citation


Hai-Jin Zhou and Hua-Feng Wu, "Design of an S-Band Two-Way Inverted Asymmetrical Doherty Power Amplifier for Long Term Evolution Applications," Progress In Electromagnetics Research Letters, Vol. 39, 73-80, 2013.
doi:10.2528/PIERL13032010
http://www.jpier.org/PIERL/pier.php?paper=13032010

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