A W-band high isolation single-balanced mixer using a 0.1-um GaN high-electron mobility transistor process is proposed in this paper. The diode is biased near the threshold voltage to reduce drive level, and the needed LO power is only 3 dBm. Moreover, the reasonable diode layout and phase compensation structure are used in the proposed mixer to enhance the LO-to-RF isolation. The measured results of the proposed mixer demonstrate a single-sideband conversion loss of 9-10.6 dB and a LO-RF isolation of 40 dB from 75 to 110 GHz with 7 dBm LO power. Moreover, a DC-to-18 GHz IF bandwidth is achieved with the LO frequency fixed at 110 GHz. The 1 dB compression point of the proposed mixer is 11 dBm with 16 dBm LO power. The measurement results indicate that GaN mixer has great potential for W-band transceiver system applications.
"A W-Band High Isolation Single-Balanced Mixer in GaN
HEMT Technology," Progress In Electromagnetics Research Letters,
Vol. 103, 7-14, 2022. doi:10.2528/PIERL21120703
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