2014-07-28
Analysis of Excitation Pulsed Signal Propagation for Atom Probe Tomography System
By
Progress In Electromagnetics Research Letters, Vol. 47, 61-70, 2014
Abstract
The purpose of this paper is on the behavioural modelling of surge voltage pulses used in Atom Probe Tomography. After brief description of the atom probe functioning principle, we examine the excitation electrical pulse signal integrity along the electric pulser (E-pulser) feeding line modelling with respect to the IEC1733/04 standard. This feeding electric line is ended by cylindrical via ground to control the ion emission. By using the transmission line (TL) ultra-broadband RLCG model, the propagating pulsed signals degradation is predicted. The signal propagation was analysed in both frequency and time domains by taking into account the substrate dispersion. The wideband frequency behaviours of the surge signal along the feeding line were examined from DC-to-2 GHz. In addition, by considering pulse surge signals with pulse-width and rise-/fall-time parameters (T1=9 ns, tr1=tf1=1.6 ns) and (T2=30 ns, tr2=4 ns/tf2=18 ns), the transient responses from 5 cm to -20 cm length TL are characterized. It was shown that the excitation pulse was significantly distorted. It was emphasized that the operated signal delay varies from 0.3 ns-to-1.5 ns in function of the via capacitor value. The time-dependent radiated E-field on the performance of the atom probe system which enables to characterize the nature of tested materials (ions or atoms) is discussed. The presented analysis approach is particularly useful for E-pulser integrated in measurement scientific instruments as Atom Probe Tomography time of flight optimisation, a nano-analysing technique that uses ultra-sharp high vacuum pulse to induce controlled erosion of samples. In this application, the excitation voltage pulse integrity during the propagation is required in order to improve the measurement instrument performances.
Citation
Blaise Ravelo, and Francois Vurpillot, "Analysis of Excitation Pulsed Signal Propagation for Atom Probe Tomography System," Progress In Electromagnetics Research Letters, Vol. 47, 61-70, 2014.
doi:10.2528/PIERL14042403
References

1. Deutsch, A., G. V. Kopcsay, P. Restle, G. Katopis, W. D. Becker, H. Smith, P. W. Coteus, C. W. Surovic, B. J. Rubin, R. P. Dunne, T. Gallo, K. A. Jenkins, L. M. Terman, R. H. Dennard, G. A. Sai-Halasz, and D. R. Knebel, "When are transmission-line effects important for on-chip interconnections?," IEEE Trans. Microwave Theory and Techniques, Vol. 45, 1836-1846, Oct. 1997.
doi:10.1109/22.641781        Google Scholar

2. Eudes, T., B. Ravelo, T. Lacrevaz, and B. Flechet, "Distributed model of two-level asymmetrical PCB interconnect tree," Proc. of 2013 International Symposium on Electromagnetic Compatibility (EMC Europe), 132-137, Brugge, Belgium, Sep. 2-6, 2013.        Google Scholar

3. Ravelo, B., "Delay modelling of high-speed distributed interconnect for the signal integrity prediction," Eur. Phys. J. Appl. Phys., Vol. 57, 31002-1-31002-8, Feb. 2012.        Google Scholar

4. Buckwalter, J. F., "Predicting microwave digital signal integrity," IEEE Trans. Advanced Packaging, Vol. 32, No. 2, 280-289, May 2009.
doi:10.1109/TADVP.2008.2011560        Google Scholar

5. Zhang, G.-H., M. Xia, and X.-M. Jiang, "Transient analysis of wire structures using time domain integral equation method with exact matrix elements," Progress In Electromagnetics Research, Vol. 92, 281-298, 2009.
doi:10.2528/PIER09032003        Google Scholar

6. Ravelo, B., "Behavioral model of symmetrical multi-level T-tree interconnects," Progress In Electromagnetics Research B, Vol. 41, 23-50, 2012.
doi:10.2528/PIERB12040205        Google Scholar

7. Muller, E. W., J. A. Panitz, and S. B. McLane, "The atom probe field ion microscope," Review of Scientific Instruments, Vol. 39, No. 1, 83-88, 1968.
doi:10.1063/1.1683116        Google Scholar

8. Blavette, D., A. Bostel, J. M. Sarrau, B. Deconihout, and A. Menand, "An atom-probe for three dimensional tomography," Nature, Vol. 363, 432-435, 1993.
doi:10.1038/363432a0        Google Scholar

9. Gault, B., F. Vurpillot, A. Vella, M. Gilbert, A. Menand, D. Blavette, and B. Deconihout, "Design of a femtosecond laser assisted tomographic atom probe," Review of Scientific Instruments, Vol. 77, No. 4, 043705, 2006.
doi:10.1063/1.2194089        Google Scholar

10. Kelly, T. F. and M. K. Miller, "Atom probe tomography," Review of Scientific Instruments, Vol. 78, No. 3, 031101, 2007.
doi:10.1063/1.2709758        Google Scholar

11. Menand, A. and D. Blavette, "Sonde atomique tridimensionnelle,", P902, 1-7, Techniques de l'Ingenieur, Jul. 1995 (in French).        Google Scholar

12. Vurpillot, F. and A. Bostel, "Tomographic atomic probe comprising a high voltage electric pulse electro-optical generator,", Patent No. 057721, 2010.        Google Scholar

13. Gault, B., M. P. Moody, J. M. Cairney, and S. P. Ringer, "Atom probe microscopy," Springer Series in Materials Science, Vol. 160, 29-68, 2012.
doi:10.1007/978-1-4614-3436-8_3        Google Scholar

14. Kelly, T. F., T. T. Gribb, J. D. Olson, R. L. Martens, J. D. Shepard, S. A. Wiener, T. C. Kunicki, R. M. Ulfg, D. R. Lenz, E. M. Strennen, E. Oltman, J. H. Bunton, and D. R. Strait, "First data from a commercial local electrode atom probe (LEAP)," Microscopy and Microanalysis, Vol. 10, 373-383, 2004.
doi:10.1017/S1431927604040565        Google Scholar

15. Miller, M. K., "Atom probe tomography and field ion microscopy: Ion-beam techniques," Characterization of Materials, 2nd Edition, May 2012, Doi: 10.1002/0471266965.com145.        Google Scholar

16. Tourek, C. J., "Application of atom probe tomography to the investigation of atomic force microscope tips and interfacial phenomena,", Ph.D. Thesis, Iowa State University, USA, 2012.        Google Scholar

18., www.belke.com.        Google Scholar

18. Kohler, S., V. Couderc, R. P. O'connor, D. Arnaud-Cormos, and P. Leveque, "A versatile high voltage nano- and sub-nanosecond pulse generator," IEEE Trans. Dielectrics and Electrical Insulation, Vol. 20, No. 4, 1201-1208, Aug. 2013.
doi:10.1109/TDEI.2013.6571435        Google Scholar

19. Yuan, J., Yuan, J., W. Xie, H. Liu, J. Liu, H. Li, X. Wang, and W. Jiang, "High-power semi-insulating GaAs photoconductive semiconductor switch employing extrinsic photoconductivity," IEEE Trans. Plasma Sci., Vol. 37, No. 10, 1959-1963, Oct. 2009.
doi:10.1109/TPS.2009.2022013        Google Scholar

20. European Standard "Connector for electronic equipment --- Tests measurements --- Part 25-7: Test 25g --- Impedance, reflection coe±cient and voltage standing wave ratio (VSWR),", NF EN 60512-25-7, Jun. 2005.        Google Scholar

21. Blood Jr., W. R., ECL System Design Handbook, 45 & 48, Motorola Semiconductor Products, Inc., Phoenix, AZ , 1988.

22. Buchanan, J. E., BiCMOS/CMOS Systems Design, 109, McGraw-Hill, New York, 1991.