Vol. 28

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2012-04-18

High-Speed PIN-Traveling Wave Photodetector Based on a Semiconductor Optical Amplifier Layer Stack on Semi-Insulating InP Substrate

By Mahmoud Nikoufard, F. S. Alaei Tabatabaei, and S. N. Ghafouri
Progress In Electromagnetics Research C, Vol. 28, 271-281, 2012
doi:10.2528/PIERC12020503

Abstract

We present a pin-Traveling wave Photodetector (TWPD) on semi-insulating (SI) InP substrate at 1.55 μm wavelength window with an electrical bandwidth of more than 120 GHz, a line characteristic impedance of about 50 W, and microwave index matched to the optical group index. The internal quantum efficiency more than 99% for a 200μm long device is determined. The layer stack of the TWPD has previously utilized in a semiconductor optical amplifier (SOA). The TWPD can be monolithically integrated with passive and active components such as arrayed waveguide grating (AWG), Mach-Zehnder Interferometer (MZI), laser and modulator.

Citation


Mahmoud Nikoufard, F. S. Alaei Tabatabaei, and S. N. Ghafouri, "High-Speed PIN-Traveling Wave Photodetector Based on a Semiconductor Optical Amplifier Layer Stack on Semi-Insulating InP Substrate," Progress In Electromagnetics Research C, Vol. 28, 271-281, 2012.
doi:10.2528/PIERC12020503
http://www.jpier.org/PIERC/pier.php?paper=12020503

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