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PIER PIER B PIER C PIER M PIER Letters PIER Photonics
2007-11-21
The Electrostatic Potential Associated to Interface Phonon Modes in Nitride Single Heterostructures
By
Miguel Mora-Ramos,

    Dr. Miguel Mora-Ramos

    Universidad Autonoma del Estado de Morelos

    Mexico

    Homepage

Rolando Perez-Alvarez,

    Dr. Rolando Perez-Alvarez

    Universidad Autonoma del Estado de Morelos

    Mexico

    Homepage

Victor Velasco

    Prof. Victor Velasco

    CSIC

    Instituto de Ciencia de Materiales de Madrid

    Spain

    Homepage

Progress In Electromagnetics Research Letters, Vol. 1, 27-33, 2008
doi:10.2528/PIERL07111806 | Google Scholar

Abstract
The electrostatic potential associated to the interface oscillation modes in nitride-based heterostructure is calculated with the use of a complete phenomenological electroelastic continuum approach for the long wave optical oscillations, and the Surface Green Function Matching technique. The crystalline symmetries of zincblende and - isotropically averaged - wurtzite are both considered in the sets of input bulk frequencies and dielectric constants.
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Citation
Miguel Mora-Ramos, Rolando Perez-Alvarez, and Victor Velasco, "The Electrostatic Potential Associated to Interface Phonon Modes in Nitride Single Heterostructures," Progress In Electromagnetics Research Letters, Vol. 1, 27-33, 2008.
doi:10.2528/PIERL07111806
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