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2007-12-12
Analysis of Capacitance Across Interconnects of Low-k Dielectric Used in a Deep Sub-Micron CMOS Technology
By
Progress In Electromagnetics Research Letters, Vol. 1, 189-196, 2008
Abstract
The paper presents the detailed analysis of the interconnect capacitance, crosstalk time and peak crosstalk voltage. The dependency of the couple capacitance and fringe capacitance on the interconnect layer dimensions affects significantly to the interconnect capacitance. The peak crosstalk time obtained to be 13 femtoseconds for 9.6 femtoseconds of propagation delay, while the maximum crosstalk voltage obtained to be 178 mV.
Citation
Sonanvane Avinash, Bhavana N. Joshi, and Ashok Mahajan, "Analysis of Capacitance Across Interconnects of Low-k Dielectric Used in a Deep Sub-Micron CMOS Technology," Progress In Electromagnetics Research Letters, Vol. 1, 189-196, 2008.
doi:10.2528/PIERL07112802
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