volume | PIER Journals

Abstract

In our earlier work we introduce a numerical analysis to investigate the excess noise and performance factor of double carrier multiplication homojunction avalanche photodiodes (APDs) considering the nonlocal nature of the ionization process. In this paper we investigate the gain,breakdo wn voltage and carrier injection breakdown probability of homojunction avalanche photodiode in the wide range of multiplication region width. Also in our calculations the effects of dead space has been considered. Our analyses based on the history dependent multiplication theory (HDMT) and width independent ionization coefficient.

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Dr. Hossein Mokari