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Abstract

In this article the details of Erbium doped Fiber Amplifier (EDFA) in presence of Silicon nanocrystal (Si-Nc) is investigated. In this analysis Si-Nc and Er ions in matrix of fiber are assumed two and five levels respectively. For this structure rate equation for transient and steady state analysis is considered. The range of Er⁽⁺³⁾ concentration and pump intensity at 488nm are considered [10¹⁷ - 10²¹]1/cm³ and [10¹⁷ - 10²³] photon/cm² ^. sec respectively in this paper. Based on numerical simulation of this problem we observed that with increasing of concentration of the Si-Nc the fiber length for given optical gain is decreased. For example in the case of 40 dB optical gain, we calculated fiber length to be 1.1 × 10⁵ cm without Si-Nc and 5 × 10² cm for σ_CCa = 1 × 10^-17 cm² (confined carrier absorption cross-section) and 5 cm for σ_CCa = 1 × 10^-19 cm² respectively. Our simulations show that for second level with increasing pump intensity the population rise and fall times are decreased. But, for third level the population rise time is decreased and fall time is depends to level of Er ion interactions. We observed that with increasing Er ions optical net gain is increased and finally has a maximum. After this special value of Er ions because of increasing in interaction between ions the net gain finally begin to decrease. In this analysis we let to Er ions have inhomogeneous distribution. Also, we observed that in this case with increasing of the distribution peak, the net gain is increased, interaction between ions is increased, the coupling coefficient to the Si-Ncs is increased and losses due to Si-Ncs are decreased. Finally effect of K_exiton (maximum number of exciton in single Si-Nc) on amplification process is considered and we observed that in the case of K_exiton = 2 the optical gain considerably and introduced losses due to Si-Nc are increased.

1. Bergano, N. S., Opt. Photon., Vol. 11, 21, 2000.

2. Kik, P. G. and A. Polman, "Exciton-erbium interaction in Si nanocrystal-doped SiO₂," Journal of Applied Physics, Vol. 88, 4, 2000. Google Scholar

3. Jiang, C. and Q. Zeng, "Optimization of Er-doped waveguide amplifier," Optics and Laser Technology, Vol. 36, 167-171, 2004.
doi:10.1016/j.optlastec.2003.07.005 Google Scholar

4. Daldosso, N., D. Navarro, M. Melchirro, L. Pavesi, F. Gourbilleau, M. Carrada, R. Rizk, C. Garcia, P, Pellegrino, B. Garrido, and L. Cognolato, "Absorption cross section and signal enhancement in Er-doped Si nanocluster rib-loaded waveguide," Applied Physics Letter, Vol. 86, 261100, 2005. Google Scholar

5. Timoshenko, V. Y., D. M. Zhigunov, P. K. Kashkarov, O. A. Shaligina, S. A. Tetrukov, R. J. Zhang, M. Fujii, and S. Hayashi, "Photoluminescence properties of Er doped structure of silicon nanocrystal in silicon dioxide matrix," Journal of Nanocrystal Solid, 352, 2006. Google Scholar

6. Daldosso, N., D. Navarro, M. Melchiorri, C. Gristina, P. Pellegrino, B.Garrido, C. Sada, G. Battaglin, F. Gourbilleau, R. Rizik, and L. Pavaesi, "Er coupled Si nanocluster waveguide," IEEE-Journal in Quantum Confinement, Vol. 12, No. 6, 1607-1617, 2005. Google Scholar

7. Kenyon, A. J., W. H. Loh, C. J. Oton, and I. Ahmad, "An analysis of erbium excited state absorption in silicon-rich silica," Journal of Luminescence, Vol. 121, 193-198, 2006.
doi:10.1016/j.jlumin.2006.07.025 Google Scholar

8. Kik, P. G. and A. Polman, "Gain limiting process in Er-doped si nanocrystal waveguide in SiO₂," Journal of Applied Physics, Vol. 91, 1, 2002. Google Scholar

9. Chryssou, C. E., A. J. Kenyon, and C. W. Pitt, "Investigation of energy exchange between silicon nanocrystal and Er ions in silica," Material Science and Engineering, Vol. B81, 2001. Google Scholar

10. Kik, P. G. and A. Polman, "Er-doped optical amplifiers on silicon," MRS Bulletin, Vol. 23, No. 4, 48, April 1998. Google Scholar

11. Lucarz, F., "Silicon nanocrystal in Er doped silica for optical amplification," MSc Created by Dell Lattitude D820 Project, College London, August 2003. Google Scholar

12. Lucarz, F. and A. J. Kenyon, "Silicon nanocrystal in Er doped silica for optical amplification," London Communication Symposium, September 2003. Google Scholar

13. Pacifici, D., G. Franzo, F. Priolo, F. Lacona, and L. D. Negro, "Modeling and perspective of the Si nanocrystal Er interaction for optical amplifier," Phys. Review B, Vol. 67, 45301, 2003. Google Scholar

14. Kik, P. G. and A. Polman, "Toward an Er doped Si nanocrystal sensitized waveguide laser the thin line between gain and loss," F.O.M Institute, 2002. Google Scholar

15. Daldosso, N., M. Melchioori, L. Pavesi, G. Pucker, F. Gourbilleau, S. Chausserie, A. Belarousi, X. Potier, and C. Dufour, "Optical loss and absorption cross section of silicon nanocrystals," Journal of Luminescence, 121, 2006. Google Scholar

16. Chryssou, C. E., A. J. Kenyon, T. S. Lwayama, and C. W. Pitt, "Evidence of energy coupling between si nanocrystal and Er in ion-implanted silica thin films," Appl. Phys. Lett., October 1999. Google Scholar

17. Prokopovich, D. V., A. V. Popov, and A. V. Vinogradov, "Analytical and numerical aspects of Bragg fiber design," Progress In Electromagnetics Research B, Vol. 6, 361-379, 2008.
doi:10.2528/PIERB08031221 Google Scholar

18. Rostami, A. and S. Makouei, "Temperature dependence analysis of the chromatic dispersion in WII-type zero-dispersion shifted fiber (ZDSF)," Progress In Electromagnetics Research B, Vol. 7, 209-222, 2008.
doi:10.2528/PIERB08040203 Google Scholar

19. Yang, T., S. Song, H. Dong, and R. Ba, "Waveguide structures for generation of Terahertzradiation by electro-optical process in GaAs and ZnGeP₂ using 1.55 μm fiber laser pulses," Progress In Electromagnetics Research Letters, Vol. 2, 95-102, 2008.
doi:10.2528/PIERL07122806 Google Scholar

20. Shwetanshumala, S. Jana and S. Konar, "Propagation of a mixture of modes of a laser beam in a medium with saturable nonlinearity," J. of Electromagn. Waves and Appl., Vol. 20, No. 1, 65-77, 2006.
doi:10.1163/156939306775777422 Google Scholar

Prof. Ali Rostami

Dr. Ahmad SalmanOgli