volume | PIER Journals

2018-02-23

Design of Broadband Transition Structure from Microstrip to Soltline with Band Notched Characteristic

Fa-Kun Sun,

Dr. Fa-Kun Sun

Tianjin University of Technology and Education

China

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Wu-Sheng Ji,

Dr. Wu-Sheng Ji

Tianjin University of Technology and Education

China

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Xiao-Chun Ji,

Dr. Xiao-Chun Ji

Tianjin University of Technology and Education

China

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Pei-Pei Han,

Dr. Pei-Pei Han

Tianjin University of Technology and Education

China

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Ying-Yun Tong,

Dr. Ying-Yun Tong

Tianjin University of Technology and Education

China

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Zhi-Yue Zhang

Dr. Zhi-Yue Zhang

Tianjin University of Technology and Education

China

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Progress In Electromagnetics Research Letters, Vol. 73, 105-112, 2018

doi:10.2528/PIERL17111610

Abstract

In this paper, a broadband transition structure from microstrip line to slotline with band-notched characteristic is proposed. To match the 50 Ω microstrip line, 4 Chebyshev impedance transformations are used in the transition structure, and its bandwidth is widened. There is a fan-shaped radial line at the microstrip terminal. A U-shaped slot is etched on the microstrip line with stepped impedance matching to achieve band-notch characteristic. By changing the length of the slot, the band notch is realized at different frequencies. Simulation and optimization of the transition structure are made by using the high frequency simulation software HFSS in this paper to achieve the band-notch function at 3.37-3.84 GHz and 10.67-11.14 GHz. In the rest of the band, return loss S₁₁ is less than -15 dB, and voltage standing wave ratio (VSWR) is less than 1.5.

Citation

Fa-Kun Sun Wu-Sheng Ji Xiao-Chun Ji Pei-Pei Han Ying-Yun Tong Zhi-Yue Zhang , "Design of Broadband Transition Structure from Microstrip to Soltline with Band Notched Characteristic," Progress In Electromagnetics Research Letters, Vol. 73, 105-112, 2018.
doi:10.2528/PIERL17111610
http://www.jpier.org/PIERL/pier.php?paper=17111610

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