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PIER PIER B PIER C PIER M PIER Letters PIER Photonics
2018-06-12
Metal-Insulator Transition Property of HF-Doped VO2(M1) Films and Its Application for Reconfigurable Silicon Photonic Device
By
Taixing Huang,

    Dr. Taixing Huang

    National Engineering Research Center of Electromterials, State Key Laboratory agnetic Radiation Control Maof Electronic Thin Fil

    University of Electronic Science and Technology of China

    China

    Homepage

Qingyang Du,

    Dr. Qingyang Du

    Microphotonics Center

    MIT

    USA

    Homepage

Tongtong Kang,

    Dr. Tongtong Kang

    National Engineering Research Center of Electromagnetic Radiation Control Materials

    University of Electronic Science and Technology of China

    China

    Homepage

Jianliang Xie,

    Dr. Jianliang Xie

    University of Electronic Science and Technology of China

    China

    Homepage

Long-Jiang Deng,

    Dr. Long-Jiang Deng

    University of Electronic Science and Technology of China

    China

    Homepage

Juejun Hu,

    Dr. Juejun Hu

    Department of Materials Science & Engineering

    Massachusetts Institute of Technology

    USA

    Homepage

Lei Bi

    Prof. Lei Bi

    School of Microelectronics and Solid State Electronics

    University of Electronic Science and Engineering of China

    China

    Homepage

Progress In Electromagnetics Research Letters, Vol. 76, 133-139, 2018
doi:10.2528/PIERL18022602 | Google Scholar

Abstract
In this work, we report a novel phase change material: Hf-doped VO2(M1) with negligible thermal hysteresis width for low-power silicon photonic reconfigurable device applications. As dopant concentration rises from 0% to 3%, the material maintains the metal-insulator transition (MIT) property of VO2(M1) thin films, and the thermal hysteresis width significantly narrows from 7 ºC to <1 ºC, leading to a good control of material electrical and optical constants as a function of temperature. A ring resonator with Hf-doped VO2(M1) material partly deposited on the ring has been fabricated. Temperature dependent transmission spectrum of the device has been tested, which shows resonant peak shift due to the phase transition of Hf doped VO2(M1). Doping Hf makes this material become a promising candidate for a variety of silicon integrated reconfigurable photonic devices.
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Citation
Taixing Huang, Qingyang Du, Tongtong Kang, Jianliang Xie, Long-Jiang Deng, Juejun Hu, and Lei Bi, "Metal-Insulator Transition Property of HF-Doped VO2(M1) Films and Its Application for Reconfigurable Silicon Photonic Device," Progress In Electromagnetics Research Letters, Vol. 76, 133-139, 2018.
doi:10.2528/PIERL18022602
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