volume | PIER Journals

Abstract

Terahertz era is becoming a more prominent and expanding platform for a variety of applications. In this paper, we propose a triband absorber with a hexagon-shaped radiating patch for THz applications. The proposed structure has three layers: a hexagonal patch made of graphene as a radiating patch, a silicon layer as a dielectric substrate, and a bottom conductive layer made of gold to prevent EM wave transmission. The proposed structure operates at three resonant frequencies 0.38 THz, 1.23 THz, and 1.77 THz respectively. We may accomplish maximum absorption level (above 90%) and maximum absorption bandwidth by setting relevant chemical potential and relaxation times to 0.2 ev and 0.2 ps respectively. The proposed structure contains a lossy silicon substrate, which has a dielectric constant of 11.9 and a loss tangent of 2.5e-004. The proposed structure reveals a larger absorption [above 90%] for the operating frequencies, and the effect on absorbance for different modes is illustrated.

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Dr. Nagandla Prasad

Dr. Pokkunuri Pardhasaradhi

Professor Boddapati Taraka Phani Madhav

Dr. Vysyaraju Lokesh Raju

Dr. Pucha Poorna Priya