volume | PIER Journals

2008-01-03

Transport Properties of Delta-Doped Field Effect Transistor

Outmane Oubram,

Dr. Outmane Oubram

Instituto de Fisica

Universidad Autonoma de Puebla

Mexico

Homepage

Luis Manuel Gaggero-Sager

Prof. Luis Manuel Gaggero-Sager

Facultad de Ciencias

Universidad Autonoma del Estado de Morelos

Mexico

Homepage

, Vol. 2, 81-87, 2008

doi:10.2528/PIERL07122810 | Google Scholar

Abstract

The first calculation of mobility and conductivity between source and drain as function of gate voltage in a δ-doped Field Effect Transistor is presented. The calculation was performed with a model for the δ-FET that was shown in [1]. The mobility was calculated using a phenomenological expression that was presented in [2]. That expression does not have empirical form, neither empirical parameter. For the first time a phenomenological expression of the conductivity is presented, which is derived from the mobility expression. The conductivity shows three different regions: a parabolic region and two linear regions. The parabolic region represents the region at which the conduction channel begins to close. On the other hand, the mobility shows a more different behavior. In the mobility there are four regions. These regions correspond to the disappearance of the different conduction channels that form the subbands of the deltadoped quantum well. The different behavior between mobility and conductivity relies on the depletion of the delta-doped quantum well as the gate potential grows.

Download Full Article (219) View Full Article volume

Citation

Copy Export

Outmane Oubram, and Luis Manuel Gaggero-Sager, "Transport Properties of Delta-Doped Field Effect Transistor," , Vol. 2, 81-87, 2008.
doi:10.2528/PIERL07122810

References

1. Gaggero-Sager, L. M. and R. Perez-Alvarez, "A simple model for delta-doped field-effect transistor electronic states," J. App. Phys., Vol. 78, No. 7, 4566-4569, 1995.
doi:10.1063/1.359800 Google Scholar

2. Rodriguez-Vargas, I., L. M. Gaggero-Sager, and V. R. Velasco, "Thomas-Fermi-Dirac theory of the hole gas of a double p-type delta-doped GaAs quantum wells," Surf. Sci., Vol. 537, No. 1, 75-83, 2003.
doi:10.1016/S0039-6028(03)00546-6 Google Scholar

3. Ploog, K., M. Hauser, and A. Fischer, Paper Presented at the 18th International Symp. GaAs Related Compounds, Heraklion, Crete, 1987. Google Scholar

4. Schubert, E. F., A. Fischer, and K. Ploog, IEEE Transactions on Electron Devices, Vol. 33, 625, 1986.
doi:10.1109/T-ED.1986.22543 Google Scholar

5. Kwok, K. Ng., "Characteristics of p- and n-channel poly-Si/Si1-xGex/Si sandwiched conductivitymodulated thin-film transistors," IEEE 0018-9383, 1996. Google Scholar

6. Ioriatti, L., "Thomas-Fermi theory of δ-doped semiconductor structures: Exact analytical results in the high-density limit," Phys. Rev. B, Vol. 41, No. 12, 8340-8344, 1990.
doi:10.1103/PhysRevB.41.8340 Google Scholar

7. Gaggero-Sager, L. M. and R. Perez-Alvarez, "A simple model for delta-doped field-effect transistor electronic states," J. Appl.Phys., Vol. 78, No. 7, 4566-4569, 1995.
doi:10.1063/1.359800 Google Scholar