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PIER PIER B PIER C PIER M PIER Letters PIER Photonics
2011-01-16
Large Signal Equivalent Circuit Model for Package AlGaN /GaN HEMT
By
Lei Sang,

    Dr. Lei Sang

    University of Electronic Science and Technology of China

    China

    Homepage

Yuehang Xu,

    Prof. Yuehang Xu

    University of Electronic Science and Technology of China

    China

    Homepage

Yongbo Chen,

    Dr. Yongbo Chen

    University of Electronic Science and Technology of China

    China

    Homepage

Yunnchuan Guo,

    Professor Yunnchuan Guo

    School of Electronic Engineering

    University of Electronic Science and Technology of China

    China

    Homepage

Rui-Min Xu

    Professor Rui-Min Xu

    School of Electronic Engineering

    University of Electronic Science and Technology of China

    China

    Homepage

Progress In Electromagnetics Research Letters, Vol. 20, 27-36, 2011
doi:10.2528/PIERL10110701 | Google Scholar

Abstract
In this paper, a large signal equivalent circuit empirical model based on Anglov model for ceramic packed high power AlGaN/GaN HEMT has been proposed. A temperature-dependent drain current model, including self-heating effect, has been presented, and good agreement is achieved between measurement results and the calculated results at different temperature. The nonlinear capacitance models are modeled by the directly measured microwave scattering (S) parameters and multi-bias small signal equivalent model (SSECM) of packed device. A power amplifier based on large size AlGaN/GaN HEMT with a total gate periphery of 36 mm has been designed by using the proposed model for validation purpose, and the simulated results fit the measurement results well at different temperature.
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Citation
Lei Sang, Yuehang Xu, Yongbo Chen, Yunnchuan Guo, and Rui-Min Xu, "Large Signal Equivalent Circuit Model for Package AlGaN /GaN HEMT," Progress In Electromagnetics Research Letters, Vol. 20, 27-36, 2011.
doi:10.2528/PIERL10110701
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