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PIER PIER B PIER C PIER M PIER Letters PIER Photonics
2018-11-15
Investigation of a Silicon-Based High Integration Reconfigurable Dipole
By
Han Su,

    Dr. Han Su

    School of Microelectronics

    Xidian University

    China

    Homepage

Huiyong Hu,

    Dr. Huiyong Hu

    School of Microelectronics

    Xidian University

    China

    Homepage

Heming Zhang,

    Dr. Heming Zhang

    School of Microelectronics

    Xidian University

    China

    Homepage

Yuanhao Miao

    Dr. Yuanhao Miao

    School of Microelectronics

    Xidian University

    China

    Homepage

Progress In Electromagnetics Research Letters, Vol. 79, 135-141, 2018
doi:10.2528/PIERL18071701 | Google Scholar

Abstract
In this paper, an on-chip high integration reconfigurable dipole with band stop filters was demonstrated. This antenna was fabricated on a high resistivity silicon wafer, and several optimized band stop filters were introduced into antenna system to replace conventional inductors and capacitors. The measured results show that the stopband of this filter can meet the requirements of the designed dipole. This method will greatly improve the integration of antenna system. On the basis of structural optimization, the proposed reconfigurable dipole realized two resonant frequencies at 1.33 GHz and 1.65 GHz, and the radiation patterns also showed satisfactory results.
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Citation
Han Su, Huiyong Hu, Heming Zhang, and Yuanhao Miao, "Investigation of a Silicon-Based High Integration Reconfigurable Dipole," Progress In Electromagnetics Research Letters, Vol. 79, 135-141, 2018.
doi:10.2528/PIERL18071701
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