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2025-08-08
Transfer Matrix Method for General Bianisotropic Layers
By
Progress In Electromagnetics Research B, Vol. 114, 99-106, 2025
Abstract
The transfer matrix method (TMM) with scattering matrices has been a valuable tool, facilitating the rapid characterization of multilayer devices in a very fast, stable, and memory-efficient manner. This paper presents a generalization of TMM with improved scattering matrices capable of simulating devices with full nine-element material tensors for the layers and any combination of signs for the real and imaginary parts of the isotropic external regions. The formulation of the bianisotropic transfer matrix method (BTMM) algorithm is covered in detail, and notes on implementation are provided. Example devices found in literature were used to benchmark the accuracy of the algorithm. The simulation of the bianisotropic device was corroborated with a bianisotropic finite-difference frequency-domain (FDFD) algorithm and a finite-element method (FEM).
Citation
Morgan Alecsandre Blankenship, Edgar Bustamante, and Raymond C. Rumpf, "Transfer Matrix Method for General Bianisotropic Layers," Progress In Electromagnetics Research B, Vol. 114, 99-106, 2025.
doi:10.2528/PIERB25021707
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